Справочник MOSFET. SIHFI820G

 

SIHFI820G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIHFI820G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 24 nC
   trⓘ - Время нарастания: 8.6 ns
   Cossⓘ - Выходная емкость: 92 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: TO-220FP

 Аналог (замена) для SIHFI820G

 

 

SIHFI820G Datasheet (PDF)

 ..1. Size:1793K  vishay
 irfi820g sihfi820g.pdf

SIHFI820G SIHFI820G

IRFI820G, SiHFI820GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s,AvailableRDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 24COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.3 Dynamic dV/dt RatingQgd (nC) 13 Low Thermal ResistanceConfiguration Si

 ..2. Size:1783K  vishay
 irfi820gpbf sihfi820g.pdf

SIHFI820G SIHFI820G

IRFI820G, SiHFI820GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s,AvailableRDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 24COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.3 Dynamic dV/dt RatingQgd (nC) 13 Low Thermal ResistanceConfiguration Si

 8.1. Size:1651K  vishay
 irfi840glcpbf sihfi840glc.pdf

SIHFI820G SIHFI820G

IRFI840GLC, SiHFI840GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 39COMPLIANT Isolated PackageQgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)Qgd (nC) 19 Sink to Lead Cr

 8.2. Size:2786K  vishay
 sihfi840g.pdf

SIHFI820G SIHFI820G

IRFI840G, SiHFI840GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s,RDS(on) ()VGS = 10 V 0.85f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 67 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 34 Low Thermal ResistanceConfiguration Si

 8.3. Size:1649K  vishay
 irfi840glc sihfi840glc.pdf

SIHFI820G SIHFI820G

IRFI840GLC, SiHFI840GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 39COMPLIANT Isolated PackageQgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)Qgd (nC) 19 Sink to Lead Cr

 8.4. Size:2785K  vishay
 irfi840g sihfi840g.pdf

SIHFI820G SIHFI820G

IRFI840G, SiHFI840GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s,RDS(on) ()VGS = 10 V 0.85f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 67 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 34 Low Thermal ResistanceConfiguration Si

 8.5. Size:1541K  vishay
 irfi830gpbf sihfi830g.pdf

SIHFI820G SIHFI820G

IRFI830G, SiHFI830GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.5f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free

 8.6. Size:1540K  vishay
 irfi830g sihfi830g.pdf

SIHFI820G SIHFI820G

IRFI830G, SiHFI830GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.5f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top