SIHFI820G datasheet, подбор замены

 ..1. Size:1793K  vishay
 irfi820g sihfi820g.pdf 

IRFI820G, SiHFI820G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s, Available RDS(on) ( )VGS = 10 V 3.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 24 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.3 Dynamic dV/dt Rating Qgd (nC) 13 Low Thermal Resistance Configuration Si

 ..2. Size:1783K  vishay
 irfi820gpbf sihfi820g.pdf 

IRFI820G, SiHFI820G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s, Available RDS(on) ( )VGS = 10 V 3.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 24 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.3 Dynamic dV/dt Rating Qgd (nC) 13 Low Thermal Resistance Configuration Si

 8.1. Size:1651K  vishay
 irfi840glcpbf sihfi840glc.pdf 

IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Isolated Package Qgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Qgd (nC) 19 Sink to Lead Cr

 8.2. Size:2786K  vishay
 sihfi840g.pdf 

IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s, RDS(on) ( )VGS = 10 V 0.85 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 67 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 34 Low Thermal Resistance Configuration Si

 8.3. Size:1649K  vishay
 irfi840glc sihfi840glc.pdf 

IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Isolated Package Qgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Qgd (nC) 19 Sink to Lead Cr

 8.4. Size:2785K  vishay
 irfi840g sihfi840g.pdf 

IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s, RDS(on) ( )VGS = 10 V 0.85 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 67 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 34 Low Thermal Resistance Configuration Si

 8.5. Size:1541K  vishay
 irfi830gpbf sihfi830g.pdf 

IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 1.5 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.0 Dynamic dV/dt Rating Qgd (nC) 22 Low Thermal Resistance Lead (Pb)-free

 8.6. Size:1540K  vishay
 irfi830g sihfi830g.pdf 

IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 1.5 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.0 Dynamic dV/dt Rating Qgd (nC) 22 Low Thermal Resistance Lead (Pb)-free