SIHFP054 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFP054

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 230 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 70 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 160 nC

Tiempo de elevación (tr): 160 nS

Conductancia de drenaje-sustrato (Cd): 2000 pF

Resistencia drenaje-fuente RDS(on): 0.014 Ohm

Empaquetado / Estuche: TO-247AC

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SIHFP054 Datasheet (PDF)

1.1. sihfp054.pdf Size:1562K _upd-mosfet

IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • Isolated Central Mounting Hole RDS(on) (Ω)VGS = 10 V 0.014 RoHS* • 175 °C Operating Temperature COMPLIANT Qg (Max.) (nC) 160 • Fast Switching Qgs (nC) 48 • Ease of Paralleling Qgd (nC) 54 • Simple Drive Requirements Configuration Single • Com

4.1. sihfp064.pdf Size:1690K _upd-mosfet

IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 • Repetitive Avalanche Rated Available RDS(on) (Ω)VGS = 10 V 0.009 • Ultra Low On- Resistance RoHS* COMPLIANT Qg (Max.) (nC) 190 • Very Low Thermal Resistance Qgs (nC) 55 • Isolated Central Mounting Hole Qgd (nC) 90 • 175 °C Operating Temperature • Fast Swi

4.2. sihfp048.pdf Size:944K _upd-mosfet

IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • Isolated Central Mounting Hole RDS(on) (Ω)VGS = 10 V 0.018 RoHS* • 175 °C Operating Temperature COMPLIANT Qg (Max.) (nC) 110 • Ease of Paralleling Qgs (nC) 29 • Simple Drive Requirements Qgd (nC) 38 • Compliant to RoHS Directive 2002/95/EC Conf

4.3. sihfp048r.pdf Size:1917K _upd-mosfet

IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • Isolated Central Mounting Hole RDS(on) (Ω)VGS = 10 V 0.018 RoHS* • 175 °C Operating Temperature COMPLIANT Qg (Max.) (nC) 110 • Ease of Paralleling Qgs (nC) 29 • Simple Drive Requirements Qgd (nC) 38 • Compliant to RoHS Directive 2002/95/EC Con

4.4. irfp048 sihfp048.pdf Size:1574K _vishay

IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Dynamic dV/dt Rating VDS (V) 60 Available � Isolated Central Mounting Hole RDS(on) (?)VGS = 10 V 0.018 RoHS* � 175 �C Operating Temperature COMPLIANT Qg (Max.) (nC) 110 � Ease of Paralleling Qgs (nC) 29 � Simple Drive Requirements Qgd (nC) 38 � Compliant to RoHS Directive 2002/95/EC Configuration Single

4.5. irfp064 sihfp064.pdf Size:1684K _vishay

IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Dynamic dV/dt Rating VDS (V) 60 � Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.009 � Ultra Low On- Resistance RoHS* COMPLIANT Qg (Max.) (nC) 190 � Very Low Thermal Resistance Qgs (nC) 55 � Isolated Central Mounting Hole Qgd (nC) 90 � 175 �C Operating Temperature � Fast Switching Configurati

Otros transistores... PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , IRFP250 , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T .

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