SIHFP054 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFP054

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 230 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 160 nS

Cossⓘ - Capacitancia de salida: 2000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: TO-247AC

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SIHFP054 datasheet

 ..1. Size:1562K  vishay
 irfp054pbf sihfp054.pdf pdf_icon

SIHFP054

IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Isolated Central Mounting Hole RDS(on) ( )VGS = 10 V 0.014 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 160 Fast Switching Qgs (nC) 48 Ease of Paralleling Qgd (nC) 54 Simple Drive Requirements Configuration Single Com

 8.1. Size:1574K  vishay
 irfp048 sihfp048.pdf pdf_icon

SIHFP054

IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Isolated Central Mounting Hole RDS(on) ( )VGS = 10 V 0.018 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 110 Ease of Paralleling Qgs (nC) 29 Simple Drive Requirements Qgd (nC) 38 Compliant to RoHS Directive 2002/95/EC Confi

 8.2. Size:1917K  vishay
 sihfp048r.pdf pdf_icon

SIHFP054

IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Isolated Central Mounting Hole RDS(on) ( )VGS = 10 V 0.018 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 110 Ease of Paralleling Qgs (nC) 29 Simple Drive Requirements Qgd (nC) 38 Compliant to RoHS Directive 2002/95/EC Con

 8.3. Size:944K  vishay
 irfp048pbf sihfp048.pdf pdf_icon

SIHFP054

IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Isolated Central Mounting Hole RDS(on) ( )VGS = 10 V 0.018 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 110 Ease of Paralleling Qgs (nC) 29 Simple Drive Requirements Qgd (nC) 38 Compliant to RoHS Directive 2002/95/EC Conf

MOSTRAR MÁS

Otros transistores... SIHFL014, SIHFL110, SIHFL210, SIHFL214, SIHFL9014, SIHFL9110, SIHFP048, SIHFP048R, IRFB4227, SIHFP064, SIHFP140, SIHFP150, SIHFP17N50L, SIHFP21N60L, SIHFP22N50A, SIHFP22N60K, IRF7606PBF