All MOSFET. SIHFP054 Datasheet

 

SIHFP054 MOSFET. Datasheet pdf. Equivalent

Type Designator: SIHFP054

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 230 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 160 nC

Rise Time (tr): 160 nS

Drain-Source Capacitance (Cd): 2000 pF

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: TO-247AC

SIHFP054 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHFP054 Datasheet (PDF)

1.1. sihfp054.pdf Size:1562K _upd-mosfet

SIHFP054
SIHFP054

IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • Isolated Central Mounting Hole RDS(on) (Ω)VGS = 10 V 0.014 RoHS* • 175 °C Operating Temperature COMPLIANT Qg (Max.) (nC) 160 • Fast Switching Qgs (nC) 48 • Ease of Paralleling Qgd (nC) 54 • Simple Drive Requirements Configuration Single • Com

4.1. sihfp064.pdf Size:1690K _upd-mosfet

SIHFP054
SIHFP054

IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 • Repetitive Avalanche Rated Available RDS(on) (Ω)VGS = 10 V 0.009 • Ultra Low On- Resistance RoHS* COMPLIANT Qg (Max.) (nC) 190 • Very Low Thermal Resistance Qgs (nC) 55 • Isolated Central Mounting Hole Qgd (nC) 90 • 175 °C Operating Temperature • Fast Swi

4.2. sihfp048.pdf Size:944K _upd-mosfet

SIHFP054
SIHFP054

IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • Isolated Central Mounting Hole RDS(on) (Ω)VGS = 10 V 0.018 RoHS* • 175 °C Operating Temperature COMPLIANT Qg (Max.) (nC) 110 • Ease of Paralleling Qgs (nC) 29 • Simple Drive Requirements Qgd (nC) 38 • Compliant to RoHS Directive 2002/95/EC Conf

 4.3. sihfp048r.pdf Size:1917K _upd-mosfet

SIHFP054
SIHFP054

IRFP048R, SiHFP048R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • Isolated Central Mounting Hole RDS(on) (Ω)VGS = 10 V 0.018 RoHS* • 175 °C Operating Temperature COMPLIANT Qg (Max.) (nC) 110 • Ease of Paralleling Qgs (nC) 29 • Simple Drive Requirements Qgd (nC) 38 • Compliant to RoHS Directive 2002/95/EC Con

4.4. irfp048 sihfp048.pdf Size:1574K _vishay

SIHFP054
SIHFP054

IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Isolated Central Mounting Hole RDS(on) (?)VGS = 10 V 0.018 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 110 Ease of Paralleling Qgs (nC) 29 Simple Drive Requirements Qgd (nC) 38 Compliant to RoHS Directive 2002/95/EC Configuration Single

 4.5. irfp064 sihfp064.pdf Size:1684K _vishay

SIHFP054
SIHFP054

IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.009 Ultra Low On- Resistance RoHS* COMPLIANT Qg (Max.) (nC) 190 Very Low Thermal Resistance Qgs (nC) 55 Isolated Central Mounting Hole Qgd (nC) 90 175 C Operating Temperature Fast Switching Configurati

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