Справочник MOSFET. SIHFP054

 

SIHFP054 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIHFP054
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 160 nC
   trⓘ - Время нарастания: 160 ns
   Cossⓘ - Выходная емкость: 2000 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: TO-247AC

 Аналог (замена) для SIHFP054

 

 

SIHFP054 Datasheet (PDF)

 ..1. Size:1562K  vishay
 irfp054pbf sihfp054.pdf

SIHFP054 SIHFP054

IRFP054, SiHFP054Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.014RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 160 Fast SwitchingQgs (nC) 48 Ease of ParallelingQgd (nC) 54 Simple Drive RequirementsConfiguration Single Com

 8.1. Size:1574K  vishay
 irfp048 sihfp048.pdf

SIHFP054 SIHFP054

IRFP048, SiHFP048Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.018RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 110 Ease of ParallelingQgs (nC) 29 Simple Drive RequirementsQgd (nC) 38 Compliant to RoHS Directive 2002/95/ECConfi

 8.2. Size:1917K  vishay
 sihfp048r.pdf

SIHFP054 SIHFP054

IRFP048R, SiHFP048RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.018RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 110 Ease of ParallelingQgs (nC) 29 Simple Drive RequirementsQgd (nC) 38 Compliant to RoHS Directive 2002/95/ECCon

 8.3. Size:944K  vishay
 irfp048pbf sihfp048.pdf

SIHFP054 SIHFP054

IRFP048, SiHFP048Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.018RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 110 Ease of ParallelingQgs (nC) 29 Simple Drive RequirementsQgd (nC) 38 Compliant to RoHS Directive 2002/95/ECConf

 8.4. Size:1684K  vishay
 irfp064 sihfp064.pdf

SIHFP054 SIHFP054

IRFP064, SiHFP064Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.009 Ultra Low On- ResistanceRoHS*COMPLIANTQg (Max.) (nC) 190 Very Low Thermal ResistanceQgs (nC) 55 Isolated Central Mounting HoleQgd (nC) 90 175 C Operating Temperature Fast Swi

 8.5. Size:1690K  vishay
 sihfp064.pdf

SIHFP054 SIHFP054

IRFP064, SiHFP064Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.009 Ultra Low On- ResistanceRoHS*COMPLIANTQg (Max.) (nC) 190 Very Low Thermal ResistanceQgs (nC) 55 Isolated Central Mounting HoleQgd (nC) 90 175 C Operating Temperature Fast Swi

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