IRF7663PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF7663PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 30 nC
   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 615 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: MICRO8

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IRF7663PBF Datasheet (PDF)

..1. Size:145K international rectifier
irf7663pbf.pdf

PD-95634IRF7663PbFHEXFET Power MOSFETl Trench TechnologyA1 8l Ultra Low On-Resistance S DVDSS = -20Vl P-Channel MOSFET 2 7S Dl Very Small SOIC Package3 6S Dl Low Profile (

7.1. Size:77K international rectifier
irf7663.pdf

PD-91866BIRF7663HEXFET Power MOSFET Trench TechnologyA1 8 Ultra Low On-Resistance S DVDSS = -20V P-Channel MOSFET 2 7S D Very Small SOIC Package3 6S D Low Profile (

8.1. Size:244K international rectifier
irf7665s2tr1pbf irf7665s2trpbf.pdf

PD - 96239DIGITAL AUDIO MOSFETIRF7665S2TRPbFIRF7665S2TR1PbFFeatures Key Parameters Key parameters optimized for Class-D audio amplifierVDS100 V applicationsRDS(on) typ. @ VGS = 10V 51 m Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiencyQg typ.8.3 nC Low Qrr for better THD and lower EMI RG(int) typ.3.5 Low package st

8.2. Size:247K international rectifier
irf7665s2pbf.pdf

8.3. Size:326K international rectifier
auirf7665s2tr.pdf

PD - 96286BAUIRF7665S2TRAUTOMOTIVE GRADEAUIRF7665S2TR1DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ.51m Low Qg for Better THD and Improved Efficiencymax. 62m Low Qrr for Better THD and Lower EMIRG (typical)3.5 Low P

8.4. Size:243K international rectifier
auirf7669l2tr1.pdf

PD - 97536AAUIRF7669L2TRAUTOMOTIVE GRADEAUIRF7669L2TR1Automotive DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS100V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.3.5m other Heavy Load Applications Exceptionally Small Footprint and Low Profilemax. 4.4m High Power DensityID (Silicon Limited)114A Low Parasitic Par

8.5. Size:474K infineon
auirf7665s2tr.pdf

AUTOMOTIVE GRADE AUIRF7665S2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 51m Low Qg for Better THD and Improved Efficiency max. 62m Low Qrr for Better THD and Lower EMI RG (typical) 3.5 Low Parasiti

8.6. Size:444K infineon
auirf7669l2tr.pdf

AUTOMOTIVE GRADE AUIRF7669L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 3.5m Exceptionally Small Footprint and Low Profile max. 4.4m High Power Density ID (Silicon Limited) 114A Low Parasitic Parameters Qg (typ

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