IRF7663PBF Datasheet. Equivalente

 ..1. Size:145K  international rectifier
 irf7663pbf.pdf

PD-95634 IRF7663PbF HEXFET Power MOSFET l Trench Technology A 1 8 l Ultra Low On-Resistance S D VDSS = -20V l P-Channel MOSFET 2 7 S D l Very Small SOIC Package 3 6 S D l Low Profile (

 7.1. Size:77K  international rectifier
 irf7663.pdf

PD-91866B IRF7663 HEXFET Power MOSFET Trench Technology A 1 8 Ultra Low On-Resistance S D VDSS = -20V P-Channel MOSFET 2 7 S D Very Small SOIC Package 3 6 S D Low Profile (

 8.1. Size:244K  international rectifier
 irf7665s2tr1pbf irf7665s2trpbf.pdf

PD - 96239 DIGITAL AUDIO MOSFET IRF7665S2TRPbF IRF7665S2TR1PbF Features Key Parameters Key parameters optimized for Class-D audio amplifier VDS 100 V applications RDS(on) typ. @ VGS = 10V 51 m Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency Qg typ. 8.3 nC Low Qrr for better THD and lower EMI RG(int) typ. 3.5 Low package st

 8.2. Size:247K  international rectifier
 irf7665s2pbf.pdf

PD - 96239 DIGITAL AUDIO MOSFET IRF7665S2TRPbF IRF7665S2TR1PbF Features Key Parameters Key parameters optimized for Class-D audio amplifier VDS 100 V applications RDS(on) typ. @ VGS = 10V 51 m Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency Qg typ. 8.3 nC Low Qrr for better THD and lower EMI RG(int) typ. 3.5 Low package st

 8.3. Size:326K  international rectifier
 auirf7665s2tr.pdf

PD - 96286B AUIRF7665S2TR AUTOMOTIVE GRADE AUIRF7665S2TR1 DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 51m Low Qg for Better THD and Improved Efficiency max. 62m Low Qrr for Better THD and Lower EMI RG (typical) 3.5 Low P

 8.4. Size:243K  international rectifier
 auirf7669l2tr1.pdf

PD - 97536A AUIRF7669L2TR AUTOMOTIVE GRADE AUIRF7669L2TR1 Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 3.5m other Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 4.4m High Power Density ID (Silicon Limited) 114A Low Parasitic Par

 8.5. Size:474K  infineon
 auirf7665s2tr.pdf

AUTOMOTIVE GRADE AUIRF7665S2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 51m Low Qg for Better THD and Improved Efficiency max. 62m Low Qrr for Better THD and Lower EMI RG (typical) 3.5 Low Parasiti

 8.6. Size:444K  infineon
 auirf7669l2tr.pdf

AUTOMOTIVE GRADE AUIRF7669L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 3.5m Exceptionally Small Footprint and Low Profile max. 4.4m High Power Density ID (Silicon Limited) 114A Low Parasitic Parameters Qg (typ