IRF7663PBF Datasheet: MOSFET, P-Ch, 20V, 8.2A. Full specification with pinout and replacement list

IRF7663PBF Datasheet. Specs and Replacement

Type Designator: IRF7663PBF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 615 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: MICRO8

IRF7663PBF substitution

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IRF7663PBF datasheet

..1. Size:145K international rectifier
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PD-95634 IRF7663PbF HEXFET Power MOSFET l Trench Technology A 1 8 l Ultra Low On-Resistance S D VDSS = -20V l P-Channel MOSFET 2 7 S D l Very Small SOIC Package 3 6 S D l Low Profile (... See More ⇒

7.1. Size:77K international rectifier
irf7663.pdf pdf_icon

PD-91866B IRF7663 HEXFET Power MOSFET Trench Technology A 1 8 Ultra Low On-Resistance S D VDSS = -20V P-Channel MOSFET 2 7 S D Very Small SOIC Package 3 6 S D Low Profile (... See More ⇒

8.1. Size:244K international rectifier
irf7665s2tr1pbf irf7665s2trpbf.pdf pdf_icon

PD - 96239 DIGITAL AUDIO MOSFET IRF7665S2TRPbF IRF7665S2TR1PbF Features Key Parameters Key parameters optimized for Class-D audio amplifier VDS 100 V applications RDS(on) typ. @ VGS = 10V 51 m Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency Qg typ. 8.3 nC Low Qrr for better THD and lower EMI RG(int) typ. 3.5 Low package st... See More ⇒

8.2. Size:247K international rectifier
irf7665s2pbf.pdf pdf_icon