SIHFP260 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHFP260

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 280 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 46 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 1200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: TO-247AC

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SIHFP260 datasheet

 ..1. Size:1768K  vishay
sihfp260.pdf pdf_icon

SIHFP260

IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.055 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 230 COMPLIANT Fast Switching Qgs (nC) 42 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Comp

 ..2. Size:1762K  vishay
irfp260 sihfp260.pdf pdf_icon

SIHFP260

IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.055 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 230 COMPLIANT Fast Switching Qgs (nC) 42 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Comp

 7.1. Size:192K  vishay
irfp26n60l irfp26n60lpbf sihfp26n60l.pdf pdf_icon

SIHFP260

IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.21 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 180 COMPLIANT Requirements Qgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 7.2. Size:1541K  vishay
irfp264 sihfp264.pdf pdf_icon

SIHFP260

IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.075 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 210 Fast Switching Qgs (nC) 35 Ease of Paralleling Qgd (nC) 98 Simple Drive Requirements Configuration Single Compl

Otros transistores... IRF820LPBF, IRF820PBF, IRF820SPBF, SIHFP23N50L, SIHFP240, SIHFP244, SIHFP250, SIHFP254, 2N7002, SIHFP264, SIHFP26N60L, SIHFP27N60K, SIHFP31N50L, SIHFP32N50K, SIHFP340, SIHFP350, SIHFP350LC