SIHFP260 MOSFET. Datasheet pdf. Equivalent

   Type Designator: SIHFP260
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 46 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO-247AC

SIHFP260 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SIHFP260 Datasheet (PDF)

..1. Size:1768K vishay
sihfp260.pdf

IRFP260, SiHFP260Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.055RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 230COMPLIANT Fast SwitchingQgs (nC) 42 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Comp

..2. Size:1762K vishay
irfp260 sihfp260.pdf

7.1. Size:192K vishay
irfp26n60l irfp26n60lpbf sihfp26n60l.pdf

IRFP26N60L, SiHFP26N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.21RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 180COMPLIANTRequirementsQgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness

7.2. Size:1541K vishay
irfp264 sihfp264.pdf

IRFP264, SiHFP264Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.075RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 210 Fast SwitchingQgs (nC) 35 Ease of ParallelingQgd (nC) 98 Simple Drive RequirementsConfiguration Single Compl

7.3. Size:1547K vishay
sihfp264.pdf