SIHFU430A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIHFU430A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm
   Paquete / Cubierta: TO-251

Búsqueda de reemplazo de MOSFET SIHFU430A

SIHFU430A Datasheet (PDF)

..1. Size:252K vishay
irfr430a irfr430apbf irfu430apbf sihfr430a sihfu430a.pdf

IRFR430A, IRFU430A, SiHFR430A, SiHFU430Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 1.7 Improved Gate, Avalanche and DynamicQg (Max.) (nC) 24dV/dt RuggednessQgs (nC) 6.5 Fully Characterized Capacitance andQgd (nC) 13Avalanche Voltage and Current

..2. Size:154K vishay
irfr430a irfu430a sihfr430a sihfu430a.pdf

IRFR430A, IRFU430A, SiHFR430A, SiHFU430AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.7RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24COMPLIANTRuggednessQgs (nC) 6.5Qgd (nC) 13 Fully Characterized Capacitance and Avalanche Voltage

..3. Size:252K infineon
irfr430a irfu430a sihfr430a sihfu430a.pdf

8.1. Size:1841K vishay
irfr420 irfu420 sihfr420 sihfu420.pdf

IRFR420, IRFU420, SiHFR420, SiHFU420Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt Rating Repetitive Avalanche RatedQg (Max.) (nC) 19 Surface Mount (IRFR420, SiHFR420)Qgs (nC) 3.3 Straight Lead (IRFU420, SiHFU420)Qgd (nC) 13 Available in Tap

8.2. Size:265K vishay
irfr420apbf irfu420apbf sihfr420a sihfu420a.pdf

IRFR420A, IRFU420A, SiHFR420A, SiHFU420AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and DynamicQgs (nC) 4.3dV/dt RuggednessQgd (nC) 8.5 Fully Characterized Capac

8.3. Size:241K vishay
irfr420a irfu420a sihfr420a sihfu420a.pdf

8.4. Size:1086K vishay
irfr420pbf irfr420trpbf irfu420pbf sihfr420 sihfu420.pdf

IRFR420, IRFU420, SiHFR420, SiHFU420www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0 Surface Mount (IRFR420, SiHFR420) Straight Lead (IRFU420, SiHFU420)Qg (Max.) (nC) 19 Available in Tape and ReelQgs (nC) 3.3 Fast SwitchingQgd (nC) 13 Ease

8.5. Size:251K infineon
irfr420a irfu420a sihfr420a sihfu420a.pdf

IRFR420A, IRFU420A, SiHFR420A, SiHFU420Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 3.0 Improved Gate, Avalanche and DynamicdV/dt RuggednessQg (Max.) (nC) 17 Fully Characterized Capacitance andQgs (nC) 4.3Avalanche Voltage and CurrentQgd (nC) 8.5

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Liste

Recientemente añadidas las descripciónes de los transistores: