All MOSFET. SIHFU430A Datasheet

 

SIHFU430A MOSFET. Datasheet pdf. Equivalent

Type Designator: SIHFU430A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 24 nC

Rise Time (tr): 27 nS

Drain-Source Capacitance (Cd): 75 pF

Maximum Drain-Source On-State Resistance (Rds): 1.7 Ohm

Package: TO-251

SIHFU430A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHFU430A Datasheet (PDF)

0.1. irfr430a irfr430apbf irfu430apbf sihfr430a sihfu430a.pdf Size:252K _vishay

SIHFU430A
SIHFU430A

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RDS(on) ()VGS = 10 V 1.7 • Improved Gate, Avalanche and Dynamic Qg (Max.) (nC) 24 dV/dt Ruggedness Qgs (nC) 6.5 • Fully Characterized Capacitance and Qgd (nC) 13 Avalanche Voltage and Current

0.2. irfr430a irfu430a sihfr430a sihfu430a.pdf Size:154K _vishay

SIHFU430A
SIHFU430A

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 1.7 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 24 COMPLIANT Ruggedness Qgs (nC) 6.5 Qgd (nC) 13 • Fully Characterized Capacitance and Avalanche Voltage

 8.1. irfr420apbf irfu420apbf sihfr420a sihfu420a.pdf Size:265K _vishay

SIHFU430A
SIHFU430A

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) (Ω)VGS = 10 V 3.0 • Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 17 • Improved Gate, Avalanche and Dynamic Qgs (nC) 4.3 dV/dt Ruggedness Qgd (nC) 8.5 • Fully Characterized Capac

8.2. irfr420a irfu420a sihfr420a sihfu420a.pdf Size:241K _vishay

SIHFU430A
SIHFU430A

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) (Ω)VGS = 10 V 3.0 • Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 17 • Improved Gate, Avalanche and Dynamic Qgs (nC) 4.3 dV/dt Ruggedness Qgd (nC) 8.5 • Fully Characterized Capac

 8.3. irfr420pbf irfr420trpbf irfu420pbf sihfr420 sihfu420.pdf Size:1086K _vishay

SIHFU430A
SIHFU430A

IRFR420, IRFU420, SiHFR420, SiHFU420 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 3.0 • Surface Mount (IRFR420, SiHFR420) • Straight Lead (IRFU420, SiHFU420) Qg (Max.) (nC) 19 • Available in Tape and Reel Qgs (nC) 3.3 • Fast Switching Qgd (nC) 13 • Ease

8.4. irfr420 irfu420 sihfr420 sihfu420.pdf Size:1841K _vishay

SIHFU430A
SIHFU430A

IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) (Ω)VGS = 10 V 3.0 • Dynamic dV/dt Rating • Repetitive Avalanche Rated Qg (Max.) (nC) 19 • Surface Mount (IRFR420, SiHFR420) Qgs (nC) 3.3 • Straight Lead (IRFU420, SiHFU420) Qgd (nC) 13 • Available in Tap

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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