SIHL510S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHL510S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 43 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua
de drenaje: 5.6 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 47 nS
Cossⓘ - Capacitancia de salida: 80 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de SIHL510S MOSFET
- Selecciónⓘ de transistores por parámetros
SIHL510S datasheet
..1. Size:272K vishay
irl510s sihl510s.pdf 
IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.6 Logic-Level Gate Drive Qgd (nC) 3.3 RDS(on) Specified at VGS = 4
..2. Size:297K vishay
irl510spbf sihl510s.pdf
IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.6 Logic-Level Gate Drive Qgd (nC) 3.3 RDS(on) Specified at VGS = 4
7.1. Size:1077K vishay
irl510pbf sihl510.pdf
IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.6 175 C Operating Temperature Qgd (nC) 3.3 Fast Switching Configuration Si
7.2. Size:1074K vishay
irl510 sihl510.pdf
IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.6 175 C Operating Temperature Qgd (nC) 3.3 Fast Switching Configuration Si
9.1. Size:296K vishay
irl540spbf sihl540s.pdf
IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Surface Mount RDS(on) ( )VGS = 5 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 64 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 9.4 Logic-Level Gate Drive Qgd (nC) 27 RDS(on) Specified at VGS = 4 V
9.2. Size:1065K vishay
irl540 sihl540.pdf
IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.077 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 64 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.4 175 C Operating Temperature Qgd (nC) 27 Fast Switching Configuration Si
9.3. Size:327K vishay
irl520l sihl520l.pdf
IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 5 V 0.27 Dynamic dV/dt Rating Qg (Max.) (nC) 12 Repetitive Avalanche Rated Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS (on) Specified at VGS = 4 V and 5 V Configuration Single 175 C Operatin
9.4. Size:1082K vishay
irl520 sihl520.pdf
IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.0 175 C Operating Temperature Qgd (nC) 7.1 Fast Switching Configuration Si
9.5. Size:1084K vishay
irl520pbf sihl520.pdf
IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.0 175 C Operating Temperature Qgd (nC) 7.1 Fast Switching Configuration Si
9.6. Size:1019K vishay
sihl530.pdf
IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.16 RoHS* Logic-Level Gate Drive Qg (Max.) (nC) 28 COMPLIANT RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 14 Fast Switching Configuration Singl
9.7. Size:996K vishay
irl530 sihl530.pdf
IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.16 RoHS* Logic-Level Gate Drive Qg (Max.) (nC) 28 COMPLIANT RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 14 Fast Switching Configuration Singl
9.8. Size:237K vishay
irl520lpbf sihl520l.pdf
IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( )VGS = 5 V 0.27 Dynamic dV/dt Rating Qg (Max.) (nC) 12 Repetitive Avalanche Rated Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS (on) Specified at VGS = 4 V and 5 V Configuration Single 175 C Operatin
9.9. Size:301K vishay
irl530s sihl530s.pdf
IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5.0 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 28 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 3.8 Logic Level Gate Drive Qgd (nC) 14 RDS(on) Specified at VGS = 4 V
9.10. Size:275K vishay
irl530s sihl530s.pdf
IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5.0 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 28 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 3.8 Logic Level Gate Drive Qgd (nC) 14 RDS(on) Specified at VGS = 4 V
9.11. Size:1068K vishay
irl540pbf sihl540.pdf
IRL540, SiHL540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.077 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 64 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 9.4 175 C Operating Temperature Qgd (nC) 27 Fast Switching Configuration Si
9.12. Size:270K vishay
irl540s sihl540s.pdf
IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Surface Mount RDS(on) ( )VGS = 5 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 64 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 9.4 Logic-Level Gate Drive Qgd (nC) 27 RDS(on) Specified at VGS = 4 V
Otros transistores... SIHG47N65E, SIHG64N65E, SIHG73N60E, SIHH11N60E, SIHH14N60E, SIHH21N60E, SIHH26N60E, SIHL510, IRF1405, SIHL520, SIHL520L, SIHL530, SIHL530S, SIHL540, SIHL540S, SIHL620, SIHL620S
