SIHL510S Specs and Replacement

Type Designator: SIHL510S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm

Package: TO-263

SIHL510S substitution

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SIHL510S datasheet

 ..1. Size:272K  vishay
 irl510s sihl510s.pdf pdf_icon

SIHL510S

IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.6 Logic-Level Gate Drive Qgd (nC) 3.3 RDS(on) Specified at VGS = 4 ... See More ⇒

 ..2. Size:297K  vishay
 irl510spbf sihl510s.pdf pdf_icon

SIHL510S

IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.6 Logic-Level Gate Drive Qgd (nC) 3.3 RDS(on) Specified at VGS = 4 ... See More ⇒

 7.1. Size:1077K  vishay
 irl510pbf sihl510.pdf pdf_icon

SIHL510S

IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.6 175 C Operating Temperature Qgd (nC) 3.3 Fast Switching Configuration Si... See More ⇒

 7.2. Size:1074K  vishay
 irl510 sihl510.pdf pdf_icon

SIHL510S

IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* Logic-Level Gate Drive COMPLIANT Qg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 2.6 175 C Operating Temperature Qgd (nC) 3.3 Fast Switching Configuration Si... See More ⇒

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Detailed specifications: SIHG47N65E, SIHG64N65E, SIHG73N60E, SIHH11N60E, SIHH14N60E, SIHH21N60E, SIHH26N60E, SIHL510, IRF1405, SIHL520, SIHL520L, SIHL530, SIHL530S, SIHL540, SIHL540S, SIHL620, SIHL620S

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