SIHL510S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIHL510S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 43 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.6 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 47 ns
Cossⓘ - Выходная емкость: 80 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.54 Ohm
Тип корпуса: TO-263
SIHL510S Datasheet (PDF)
irl510s sihl510s.pdf
IRL510S, SiHL510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.6 Logic-Level Gate DriveQgd (nC) 3.3 RDS(on) Specified at VGS = 4
irl510spbf sihl510s.pdf
IRL510S, SiHL510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.6 Logic-Level Gate DriveQgd (nC) 3.3 RDS(on) Specified at VGS = 4
irl510pbf sihl510.pdf
IRL510, SiHL510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.6 175 C Operating TemperatureQgd (nC) 3.3 Fast SwitchingConfiguration Si
irl510 sihl510.pdf
IRL510, SiHL510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.6 175 C Operating TemperatureQgd (nC) 3.3 Fast SwitchingConfiguration Si
irl540spbf sihl540s.pdf
IRL540S, SiHL540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Surface MountRDS(on) ()VGS = 5 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 64 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 9.4 Logic-Level Gate DriveQgd (nC) 27 RDS(on) Specified at VGS = 4 V
irl540 sihl540.pdf
IRL540, SiHL540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche Rated RDS(on) ()VGS = 5.0 V 0.077RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 64 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.4 175 C Operating TemperatureQgd (nC) 27 Fast SwitchingConfiguration Si
irl520l sihl520l.pdf
IRL520L, SiHL520LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 5 V 0.27 Dynamic dV/dt RatingQg (Max.) (nC) 12 Repetitive Avalanche RatedQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS (on) Specified at VGS = 4 V and 5 VConfiguration Single 175C Operatin
irl520 sihl520.pdf
IRL520, SiHL520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche Rated RDS(on) ()VGS = 5.0 V 0.27RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 3.0 175 C Operating TemperatureQgd (nC) 7.1 Fast SwitchingConfiguration Si
irl520pbf sihl520.pdf
IRL520, SiHL520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche Rated RDS(on) ()VGS = 5.0 V 0.27RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 3.0 175 C Operating TemperatureQgd (nC) 7.1 Fast SwitchingConfiguration Si
sihl530.pdf
IRL530, SiHL530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.16RoHS* Logic-Level Gate DriveQg (Max.) (nC) 28 COMPLIANT RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 14 Fast SwitchingConfiguration Singl
irl530 sihl530.pdf
IRL530, SiHL530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.16RoHS* Logic-Level Gate DriveQg (Max.) (nC) 28 COMPLIANT RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 14 Fast SwitchingConfiguration Singl
irl520lpbf sihl520l.pdf
IRL520L, SiHL520LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 5 V 0.27 Dynamic dV/dt RatingQg (Max.) (nC) 12 Repetitive Avalanche RatedQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS (on) Specified at VGS = 4 V and 5 VConfiguration Single 175C Operatin
irl530s sihl530s.pdf
IRL530S, SiHL530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5.0 V 0.16 Available in Tape and ReelQg (Max.) (nC) 28 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 3.8 Logic Level Gate DriveQgd (nC) 14 RDS(on) Specified at VGS = 4 V
irl530s sihl530s.pdf
IRL530S, SiHL530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5.0 V 0.16 Available in Tape and ReelQg (Max.) (nC) 28 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 3.8 Logic Level Gate DriveQgd (nC) 14 RDS(on) Specified at VGS = 4 V
irl540pbf sihl540.pdf
IRL540, SiHL540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche Rated RDS(on) ()VGS = 5.0 V 0.077RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 64 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 9.4 175 C Operating TemperatureQgd (nC) 27 Fast SwitchingConfiguration Si
irl540s sihl540s.pdf
IRL540S, SiHL540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Surface MountRDS(on) ()VGS = 5 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 64 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 9.4 Logic-Level Gate DriveQgd (nC) 27 RDS(on) Specified at VGS = 4 V
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDMC7696
History: FDMC7696
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918