SIHLD110 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIHLD110

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.7 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm

Encapsulados: HVMDIP

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SIHLD110 datasheet

 ..1. Size:1624K  vishay
sihld110.pdf pdf_icon

SIHLD110

IRLD110, SiHLD110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 For Automatic Insertion Qg (Max.) (nC) 6.1 End Stackable Qgs (nC) 2.6 Qgd (nC) 3.3 Logic-Level Gate Drive Configuration Single RDS(on) Specified at VGS = 4 V and 5 V 175 C

 ..2. Size:1607K  vishay
irld110 sihld110.pdf pdf_icon

SIHLD110

IRLD110, SiHLD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* For Automatic Insertion Qg (Max.) (nC) 6.1 COMPLIANT End Stackable Qgs (nC) 2.6 Qgd (nC) 3.3 Logic-Level Gate Drive Configuration Single RDS(on) Specified at VGS = 4 V and 5 V

 8.1. Size:1675K  vishay
irld120 sihld120.pdf pdf_icon

SIHLD110

IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 12 End Stackable Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single

 8.2. Size:1677K  vishay
irld120pbf sihld120.pdf pdf_icon

SIHLD110

IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 12 End Stackable Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single

Otros transistores... SIHL620, SIHL620S, SIHL630, SIHL630S, SIHL640, SIHL640S, SIHLD014, SIHLD024, 60N06, SIHLD120, SIHLI520G, SIHLI530G, SIHLI540G, SIHLI620G, SIHLI630G, SIHLI640G, SIHLIZ14G