SIHLD110 Specs and Replacement
Type Designator: SIHLD110
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.7 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
Package: HVMDIP
SIHLD110 substitution
- MOSFET ⓘ Cross-Reference Search
SIHLD110 datasheet
sihld110.pdf
IRLD110, SiHLD110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 For Automatic Insertion Qg (Max.) (nC) 6.1 End Stackable Qgs (nC) 2.6 Qgd (nC) 3.3 Logic-Level Gate Drive Configuration Single RDS(on) Specified at VGS = 4 V and 5 V 175 C... See More ⇒
irld110 sihld110.pdf
IRLD110, SiHLD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* For Automatic Insertion Qg (Max.) (nC) 6.1 COMPLIANT End Stackable Qgs (nC) 2.6 Qgd (nC) 3.3 Logic-Level Gate Drive Configuration Single RDS(on) Specified at VGS = 4 V and 5 V... See More ⇒
irld120 sihld120.pdf
IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 12 End Stackable Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single ... See More ⇒
irld120pbf sihld120.pdf
IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 12 End Stackable Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single ... See More ⇒
Detailed specifications: SIHL620, SIHL620S, SIHL630, SIHL630S, SIHL640, SIHL640S, SIHLD014, SIHLD024, 60N06, SIHLD120, SIHLI520G, SIHLI530G, SIHLI540G, SIHLI620G, SIHLI630G, SIHLI640G, SIHLIZ14G
Keywords - SIHLD110 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
