All MOSFET. SIHLD110 Datasheet

 

SIHLD110 Datasheet and Replacement


   Type Designator: SIHLD110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 4.7 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
   Package: HVMDIP
      - MOSFET Cross-Reference Search

 

SIHLD110 Datasheet (PDF)

 ..1. Size:1624K  vishay
 sihld110.pdf pdf_icon

SIHLD110

IRLD110, SiHLD110www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100 Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54 For Automatic InsertionQg (Max.) (nC) 6.1 End StackableQgs (nC) 2.6Qgd (nC) 3.3 Logic-Level Gate DriveConfiguration Single RDS(on) Specified at VGS = 4 V and 5 V 175 C

 ..2. Size:1607K  vishay
 irld110 sihld110.pdf pdf_icon

SIHLD110

IRLD110, SiHLD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 6.1COMPLIANT End StackableQgs (nC) 2.6Qgd (nC) 3.3 Logic-Level Gate DriveConfiguration Single RDS(on) Specified at VGS = 4 V and 5 V

 8.1. Size:1675K  vishay
 irld120 sihld120.pdf pdf_icon

SIHLD110

IRLD120, SiHLD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.27RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 12 End StackableQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single

 8.2. Size:1677K  vishay
 irld120pbf sihld120.pdf pdf_icon

SIHLD110

IRLD120, SiHLD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.27RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 12 End StackableQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single

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Keywords - SIHLD110 MOSFET datasheet

 SIHLD110 cross reference
 SIHLD110 equivalent finder
 SIHLD110 lookup
 SIHLD110 substitution
 SIHLD110 replacement

 

 
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