SIHLD120 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHLD120
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 1.3 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 64 nS
Cossⓘ - Capacitancia de salida: 150 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
Encapsulados: HVMDIP
Búsqueda de reemplazo de SIHLD120 MOSFET
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SIHLD120 datasheet
irld120 sihld120.pdf
IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 12 End Stackable Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single
irld120pbf sihld120.pdf
IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 12 End Stackable Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single
sihld110.pdf
IRLD110, SiHLD110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 For Automatic Insertion Qg (Max.) (nC) 6.1 End Stackable Qgs (nC) 2.6 Qgd (nC) 3.3 Logic-Level Gate Drive Configuration Single RDS(on) Specified at VGS = 4 V and 5 V 175 C
irld110 sihld110.pdf
IRLD110, SiHLD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* For Automatic Insertion Qg (Max.) (nC) 6.1 COMPLIANT End Stackable Qgs (nC) 2.6 Qgd (nC) 3.3 Logic-Level Gate Drive Configuration Single RDS(on) Specified at VGS = 4 V and 5 V
Otros transistores... SIHL620S, SIHL630, SIHL630S, SIHL640, SIHL640S, SIHLD014, SIHLD024, SIHLD110, IRFP064N, SIHLI520G, SIHLI530G, SIHLI540G, SIHLI620G, SIHLI630G, SIHLI640G, SIHLIZ14G, SIHLIZ24G
History: 2SK3475
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