All MOSFET. SIHLD120 Datasheet

 

SIHLD120 Datasheet and Replacement


   Type Designator: SIHLD120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 1.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: HVMDIP
 

 SIHLD120 substitution

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SIHLD120 Datasheet (PDF)

 ..1. Size:1675K  vishay
irld120 sihld120.pdf pdf_icon

SIHLD120

IRLD120, SiHLD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.27RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 12 End StackableQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single

 ..2. Size:1677K  vishay
irld120pbf sihld120.pdf pdf_icon

SIHLD120

IRLD120, SiHLD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.27RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 12 End StackableQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single

 8.1. Size:1624K  vishay
sihld110.pdf pdf_icon

SIHLD120

IRLD110, SiHLD110www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100 Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54 For Automatic InsertionQg (Max.) (nC) 6.1 End StackableQgs (nC) 2.6Qgd (nC) 3.3 Logic-Level Gate DriveConfiguration Single RDS(on) Specified at VGS = 4 V and 5 V 175 C

 8.2. Size:1607K  vishay
irld110 sihld110.pdf pdf_icon

SIHLD120

IRLD110, SiHLD110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* For Automatic InsertionQg (Max.) (nC) 6.1COMPLIANT End StackableQgs (nC) 2.6Qgd (nC) 3.3 Logic-Level Gate DriveConfiguration Single RDS(on) Specified at VGS = 4 V and 5 V

Datasheet: SIHL620S , SIHL630 , SIHL630S , SIHL640 , SIHL640S , SIHLD014 , SIHLD024 , SIHLD110 , 5N50 , SIHLI520G , SIHLI530G , SIHLI540G , SIHLI620G , SIHLI630G , SIHLI640G , SIHLIZ14G , SIHLIZ24G .

History: IRL540A | 2N6659-LCC4 | CM13N50 | CM18N50P | FDP047AN08A0

Keywords - SIHLD120 MOSFET datasheet

 SIHLD120 cross reference
 SIHLD120 equivalent finder
 SIHLD120 lookup
 SIHLD120 substitution
 SIHLD120 replacement

 

 
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