SIHLD120 MOSFET Datasheet: N-Ch, 100V, 1.3A. Full specification with pinout and replacement list

SIHLD120 Specs and Replacement

Type Designator: SIHLD120

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 1.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 64 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: HVMDIP

SIHLD120 substitution

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SIHLD120 datasheet

..1. Size:1675K vishay
irld120 sihld120.pdf pdf_icon

IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 12 End Stackable Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single ... See More ⇒

..2. Size:1677K vishay
irld120pbf sihld120.pdf pdf_icon

8.1. Size:1624K vishay
sihld110.pdf pdf_icon

IRLD110, SiHLD110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 For Automatic Insertion Qg (Max.) (nC) 6.1 End Stackable Qgs (nC) 2.6 Qgd (nC) 3.3 Logic-Level Gate Drive Configuration Single RDS(on) Specified at VGS = 4 V and 5 V 175 C... See More ⇒

8.2. Size:1607K vishay
irld110 sihld110.pdf pdf_icon

IRLD110, SiHLD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.54 RoHS* For Automatic Insertion Qg (Max.) (nC) 6.1 COMPLIANT End Stackable Qgs (nC) 2.6 Qgd (nC) 3.3 Logic-Level Gate Drive Configuration Single RDS(on) Specified at VGS = 4 V and 5 V... See More ⇒