SIHLI540G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHLI540G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 170 nS
Cossⓘ - Capacitancia de salida: 560 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.077 Ohm
Paquete / Cubierta: TO-220FP
Búsqueda de reemplazo de SIHLI540G MOSFET
SIHLI540G Datasheet (PDF)
irli540g irli540gpbf sihli540g.pdf

IRLI540G, SiHLI540GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5 V 0.077f = 60 Hz)Qg (Max.) (nC) 64 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 9.4 Logic-Level Gate DriveQgd (nC) 27 RDS (on) Specified at VGS = 4 V and 5 V Fast SwitchingConfigur
irli520g irli520gpbf sihli520g.pdf

IRLI520G, SiHLI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = 5 V 0.27RoHS* Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQg (Max.) (nC) 12 Logic-Level Gate DriveQgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 7.
irli530g sihli530g.pdf

IRLI530G, SiHLI530GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.16f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 28 Logic-Level Gate DriveQgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 14
irli530g irli530gpbf sihli530g.pdf

IRLI530G, SiHLI530GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.16f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 28 Logic-Level Gate DriveQgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 14
Otros transistores... SIHL640 , SIHL640S , SIHLD014 , SIHLD024 , SIHLD110 , SIHLD120 , SIHLI520G , SIHLI530G , IRFZ44N , SIHLI620G , SIHLI630G , SIHLI640G , SIHLIZ14G , SIHLIZ24G , SIHLIZ34G , SIHLIZ44G , SIHLL014 .
History: IXTH67N10MA | 2N3460 | FXN28N50T | 2SJ419 | DMT4011LFG | SSM40N03P | HFD8N65U
History: IXTH67N10MA | 2N3460 | FXN28N50T | 2SJ419 | DMT4011LFG | SSM40N03P | HFD8N65U



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