All MOSFET. SIHLI540G Datasheet

 

SIHLI540G MOSFET. Datasheet pdf. Equivalent

Type Designator: SIHLI540G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 48 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 64 nC

Rise Time (tr): 170 nS

Drain-Source Capacitance (Cd): 560 pF

Maximum Drain-Source On-State Resistance (Rds): 0.077 Ohm

Package: TO-220FP

SIHLI540G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHLI540G Datasheet (PDF)

1.1. sihli540g.pdf Size:1502K _upd-mosfet

SIHLI540G
SIHLI540G

IRLI540G, SiHLI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 5 V 0.077 f = 60 Hz) Qg (Max.) (nC) 64 • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 9.4 • Logic-Level Gate Drive Qgd (nC) 27 • RDS (on) Specified at VGS = 4 V and 5 V • Fast Switching Configur

4.1. sihli530g.pdf Size:1535K _upd-mosfet

SIHLI540G
SIHLI540G

IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 5.0 V 0.16 f = 60 Hz) RoHS* COMPLIANT • Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 28 • Logic-Level Gate Drive Qgs (nC) 3.8 • RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 14

4.2. sihli520g.pdf Size:968K _upd-mosfet

SIHLI540G
SIHLI540G

IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) (Ω)VGS = 5 V 0.27 RoHS* • Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 12 • Logic-Level Gate Drive Qgs (nC) 3.0 • RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 7.

 4.3. irli530g sihli530g.pdf Size:1533K _vishay

SIHLI540G
SIHLI540G

IRLI530G, SiHLI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 5.0 V 0.16 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 28 Logic-Level Gate Drive Qgs (nC) 3.8 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 14 Fast Switch

4.4. irli520g sihli520g.pdf Size:967K _vishay

SIHLI540G
SIHLI540G

IRLI520G, SiHLI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) (?)VGS = 5 V 0.27 RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 12 Logic-Level Gate Drive Qgs (nC) 3.0 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 7.1 Fast Swit

Datasheet: SIHL640 , SIHL640S , SIHLD014 , SIHLD024 , SIHLD110 , SIHLD120 , SIHLI520G , SIHLI530G , IRF3205 , SIHLI620G , SIHLI630G , SIHLI640G , SIHLIZ14G , SIHLIZ24G , SIHLIZ34G , SIHLIZ44G , SIHLL014 .

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