SIHLZ24S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHLZ24S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 60 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 10 V
Corriente continua de drenaje |Id|: 17 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 18 nC
Tiempo de subida (tr): 110 nS
Conductancia de drenaje-sustrato (Cd): 360 pF
Resistencia entre drenaje y fuente RDS(on): 0.1 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET SIHLZ24S
SIHLZ24S Datasheet (PDF)
irlz24s irlz24l sihlz24s sihlz24l.pdf
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt RatingQg (Max.) (nC) 18 Logic-Level Gate DriveQgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 12
irlz24s irlz24l irlz24spbf irlz24lpbf sihlz24l sihlz24s.pdf
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt RatingQg (Max.) (nC) 18 Logic-Level Gate DriveQgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 12
irlz24pbf irlz24 sihlz24.pdf
IRLZ24, SiHLZ24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.10RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 18 175 C Operating TemperatureQgs (nC) 4.5 Fast SwitchingQgd (nC) 12 Ease of ParallelingConfiguration Single
irlz24 sihlz24.pdf
IRLZ24, SiHLZ24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.10RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 18 175 C Operating TemperatureQgs (nC) 4.5 Fast SwitchingQgd (nC) 12 Ease of ParallelingConfiguration Single
irlz44s irlz44spbf sihlz44s.pdf
IRLZ44S, SiHLZ44SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate DriveQgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 43 175 C Operating
irlz34l irlz34s sihlz34l sihlz34s.pdf
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.05 Surface Mount (IRLZ34S, SiHLZ34S)Qg (Max.) (nC) 35 Low-Profile Through-Hole (IRLZ34L, SiHLZ34L)Qgs (nC) 7.1 175 C Operating Temperature Fast Sw
irlz44 sihlz44.pdf
IRLZ44, SiHLZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.028RoHS* RDS(on) Specified at VGS = 4 V and 5 VQg (Max.) (nC) 66 COMPLIANT 175 C Operating TemperatureQgs (nC) 12 Fast SwitchingQgd (nC) 43Configuration Single Ease of Paralleling Si
irlz14spbf sihlz14l sihlz14s.pdf
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S)Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
irlz44pbf sihlz44.pdf
IRLZ44, SiHLZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.028RoHS* RDS(on) Specified at VGS = 4 V and 5 VQg (Max.) (nC) 66 COMPLIANT 175 C Operating TemperatureQgs (nC) 12 Fast SwitchingQgd (nC) 43Configuration Single Ease of Paralleling Si
irlz34 sihlz34.pdf
IRLZ34, SiHLZ34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.050RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 35 175 C Operating TemperatureQgs (nC) 7.1 Fast SwitchingQgd (nC) 25 Ease of ParallelingConfiguration Single
irlz14s irlz14l sihlz14s sihlz14l.pdf
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S)Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
irlz14 sihlz14.pdf
IRLZ14, SiHLZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.20RoHS*Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQgs (nC) 3.5 175 C Operating TemperatureQgd (nC) 6.0 Fast SwitchingConfiguration Single Ease of ParallelingD
irlz44s sihlz44s.pdf
IRLZ44S, SiHLZ44SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate DriveQgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 43 175 C Operating
irlz34pbf sihlz34.pdf
IRLZ34, SiHLZ34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.050RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 35 175 C Operating TemperatureQgs (nC) 7.1 Fast SwitchingQgd (nC) 25 Ease of ParallelingConfiguration Single
irlz14pbf sihlz14.pdf
IRLZ14, SiHLZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.20RoHS*Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQgs (nC) 3.5 175 C Operating TemperatureQgd (nC) 6.0 Fast SwitchingConfiguration Single Ease of ParallelingD
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