SIHLZ24S Specs and Replacement
Type Designator: SIHLZ24S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ -
Output Capacitance: 360 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO-263
- MOSFET ⓘ Cross-Reference Search
SIHLZ24S datasheet
..1. Size:308K vishay
irlz24s irlz24l sihlz24s sihlz24l.pdf 
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt Rating Qg (Max.) (nC) 18 Logic-Level Gate Drive Qgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 12 ... See More ⇒
..2. Size:334K vishay
irlz24s irlz24l irlz24spbf irlz24lpbf sihlz24l sihlz24s.pdf
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt Rating Qg (Max.) (nC) 18 Logic-Level Gate Drive Qgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 V Qgd (nC) 12 ... See More ⇒
7.1. Size:1747K vishay
irlz24pbf irlz24 sihlz24.pdf
IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.10 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 18 175 C Operating Temperature Qgs (nC) 4.5 Fast Switching Qgd (nC) 12 Ease of Paralleling Configuration Single ... See More ⇒
7.2. Size:1744K vishay
irlz24 sihlz24.pdf
IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.10 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 18 175 C Operating Temperature Qgs (nC) 4.5 Fast Switching Qgd (nC) 12 Ease of Paralleling Configuration Single ... See More ⇒
9.1. Size:436K vishay
irlz44s irlz44spbf sihlz44s.pdf
IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate Drive Qgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 43 175 C Operating ... See More ⇒
9.2. Size:367K vishay
irlz34l irlz34s sihlz34l sihlz34s.pdf
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.05 Surface Mount (IRLZ34S, SiHLZ34S) Qg (Max.) (nC) 35 Low-Profile Through-Hole (IRLZ34L, SiHLZ34L) Qgs (nC) 7.1 175 C Operating Temperature Fast Sw... See More ⇒
9.3. Size:1736K vishay
irlz44 sihlz44.pdf
IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.028 RoHS* RDS(on) Specified at VGS = 4 V and 5 V Qg (Max.) (nC) 66 COMPLIANT 175 C Operating Temperature Qgs (nC) 12 Fast Switching Qgd (nC) 43 Configuration Single Ease of Paralleling Si... See More ⇒
9.4. Size:337K vishay
irlz14spbf sihlz14l sihlz14s.pdf
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 175 C Operating Temperature Fast Sw... See More ⇒
9.5. Size:1738K vishay
irlz44pbf sihlz44.pdf
IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.028 RoHS* RDS(on) Specified at VGS = 4 V and 5 V Qg (Max.) (nC) 66 COMPLIANT 175 C Operating Temperature Qgs (nC) 12 Fast Switching Qgd (nC) 43 Configuration Single Ease of Paralleling Si... See More ⇒
9.6. Size:1531K vishay
irlz34 sihlz34.pdf
IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.050 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 35 175 C Operating Temperature Qgs (nC) 7.1 Fast Switching Qgd (nC) 25 Ease of Paralleling Configuration Single ... See More ⇒
9.7. Size:312K vishay
irlz14s irlz14l sihlz14s sihlz14l.pdf
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) ( )VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S) Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) Qgs (nC) 3.5 175 C Operating Temperature Fast Sw... See More ⇒
9.8. Size:1084K vishay
irlz14 sihlz14.pdf
IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.20 RoHS* Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qgs (nC) 3.5 175 C Operating Temperature Qgd (nC) 6.0 Fast Switching Configuration Single Ease of Paralleling D ... See More ⇒
9.9. Size:411K vishay
irlz44s sihlz44s.pdf
IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Surface Mount RDS(on) ( )VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate Drive Qgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 V Qgd (nC) 43 175 C Operating ... See More ⇒
9.10. Size:1533K vishay
irlz34pbf sihlz34.pdf
IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.050 RoHS* RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qg (Max.) (nC) 35 175 C Operating Temperature Qgs (nC) 7.1 Fast Switching Qgd (nC) 25 Ease of Paralleling Configuration Single ... See More ⇒
9.11. Size:1086K vishay
irlz14pbf sihlz14.pdf
IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Logic-Level Gate Drive RDS(on) ( )VGS = 5.0 V 0.20 RoHS* Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 V COMPLIANT Qgs (nC) 3.5 175 C Operating Temperature Qgd (nC) 6.0 Fast Switching Configuration Single Ease of Paralleling D ... See More ⇒
Detailed specifications: SIHLU014, SIHLU024, SIHLU110, SIHLZ14, SIHLZ14L, SIHLZ14S, SIHLZ24, SIHLZ24L, IRFB4115, SIHLZ34, SIHLZ34L, SIHLZ34S, SIHLZ44, SIHLZ44S, SIHP10N40D, SIHP12N50C, SIHP12N50E
Keywords - SIHLZ24S MOSFET specs
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