SIHLZ24S Datasheet and Replacement
Type Designator: SIHLZ24S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Id|ⓘ - Maximum Drain Current: 17
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 110
nS
Cossⓘ -
Output Capacitance: 360
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
TO-263
- MOSFET Cross-Reference Search
SIHLZ24S Datasheet (PDF)
..1. Size:308K vishay
irlz24s irlz24l sihlz24s sihlz24l.pdf 
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt RatingQg (Max.) (nC) 18 Logic-Level Gate DriveQgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 12
..2. Size:334K vishay
irlz24s irlz24l irlz24spbf irlz24lpbf sihlz24l sihlz24s.pdf
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5 V 0.10 Available in Tape and Reel Dynamic dV/dt RatingQg (Max.) (nC) 18 Logic-Level Gate DriveQgs (nC) 4.5 RDS (on) Specified at VGS = 4 V and 5 VQgd (nC) 12
7.1. Size:1747K vishay
irlz24pbf irlz24 sihlz24.pdf
IRLZ24, SiHLZ24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.10RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 18 175 C Operating TemperatureQgs (nC) 4.5 Fast SwitchingQgd (nC) 12 Ease of ParallelingConfiguration Single
7.2. Size:1744K vishay
irlz24 sihlz24.pdf
IRLZ24, SiHLZ24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.10RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 18 175 C Operating TemperatureQgs (nC) 4.5 Fast SwitchingQgd (nC) 12 Ease of ParallelingConfiguration Single
9.1. Size:436K vishay
irlz44s irlz44spbf sihlz44s.pdf
IRLZ44S, SiHLZ44SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate DriveQgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 43 175 C Operating
9.2. Size:367K vishay
irlz34l irlz34s sihlz34l sihlz34s.pdf
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.05 Surface Mount (IRLZ34S, SiHLZ34S)Qg (Max.) (nC) 35 Low-Profile Through-Hole (IRLZ34L, SiHLZ34L)Qgs (nC) 7.1 175 C Operating Temperature Fast Sw
9.3. Size:1736K vishay
irlz44 sihlz44.pdf
IRLZ44, SiHLZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.028RoHS* RDS(on) Specified at VGS = 4 V and 5 VQg (Max.) (nC) 66 COMPLIANT 175 C Operating TemperatureQgs (nC) 12 Fast SwitchingQgd (nC) 43Configuration Single Ease of Paralleling Si
9.4. Size:337K vishay
irlz14spbf sihlz14l sihlz14s.pdf
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S)Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
9.5. Size:1738K vishay
irlz44pbf sihlz44.pdf
IRLZ44, SiHLZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.028RoHS* RDS(on) Specified at VGS = 4 V and 5 VQg (Max.) (nC) 66 COMPLIANT 175 C Operating TemperatureQgs (nC) 12 Fast SwitchingQgd (nC) 43Configuration Single Ease of Paralleling Si
9.6. Size:1531K vishay
irlz34 sihlz34.pdf
IRLZ34, SiHLZ34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.050RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 35 175 C Operating TemperatureQgs (nC) 7.1 Fast SwitchingQgd (nC) 25 Ease of ParallelingConfiguration Single
9.7. Size:312K vishay
irlz14s irlz14l sihlz14s sihlz14l.pdf
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S)Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)Qgs (nC) 3.5 175 C Operating Temperature Fast Sw
9.8. Size:1084K vishay
irlz14 sihlz14.pdf
IRLZ14, SiHLZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.20RoHS*Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQgs (nC) 3.5 175 C Operating TemperatureQgd (nC) 6.0 Fast SwitchingConfiguration Single Ease of ParallelingD
9.9. Size:411K vishay
irlz44s sihlz44s.pdf
IRLZ44S, SiHLZ44SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Surface MountRDS(on) ()VGS = 5.0 V 0.028 Available in Tape and Reel Qg (Max.) (nC) 66 Dynamic dV/dt Rating Logic-Level Gate DriveQgs (nC) 12 RDS(on) Specified at VGS = 4 V and 5 VQgd (nC) 43 175 C Operating
9.10. Size:1533K vishay
irlz34pbf sihlz34.pdf
IRLZ34, SiHLZ34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.050RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 35 175 C Operating TemperatureQgs (nC) 7.1 Fast SwitchingQgd (nC) 25 Ease of ParallelingConfiguration Single
9.11. Size:1086K vishay
irlz14pbf sihlz14.pdf
IRLZ14, SiHLZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.20RoHS*Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQgs (nC) 3.5 175 C Operating TemperatureQgd (nC) 6.0 Fast SwitchingConfiguration Single Ease of ParallelingD
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History: STD6N60M2
| IRFP21N60L
| AP2318GEN-HF
| STT3P2UH7
| UPA2756GR
| IXTA08N120P
Keywords - SIHLZ24S MOSFET datasheet
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SIHLZ24S equivalent finder
SIHLZ24S lookup
SIHLZ24S substitution
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