IRLIZ34A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLIZ34A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 27 nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 334 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm
   Paquete / Cubierta: TO262

Búsqueda de reemplazo de MOSFET IRLIZ34A

IRLIZ34A Datasheet (PDF)

..1. Size:349K 1
irliz34a irlw34a.pdf

7.1. Size:1006K international rectifier
irliz34gpbf.pdf

PD- 95656IRLIZ34GPbF Lead-Free7/26/04Document Number: 91317 www.vishay.com1IRLIZ34GPbFDocument Number: 91317 www.vishay.com2IRLIZ34GPbFDocument Number: 91317 www.vishay.com3IRLIZ34GPbFDocument Number: 91317 www.vishay.com4IRLIZ34GPbFDocument Number: 91317 www.vishay.com5IRLIZ34GPbFDocument Number: 91317 www.vishay.com6IRLIZ34GPbFPeak Diode Re

7.2. Size:105K international rectifier
irliz34n.pdf

PD - 9.1329BIRLIZ34NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.035 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 22ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelow

7.3. Size:258K international rectifier
irliz34npbf.pdf

PD - 95455IRLIZ34NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.035l Fully Avalanche Rated Gl Lead-FreeID = 22ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing technique

7.4. Size:169K international rectifier
irliz34g.pdf

7.5. Size:1637K vishay
irliz34g sihliz34g.pdf

IRLIZ34G, SiHLIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.050f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mmQgs (nC) 7.1 Logic-Level Gate DriveQgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V

7.6. Size:1638K vishay
irliz34gpbf sihliz34g.pdf

7.7. Size:275K inchange semiconductor
irliz34g.pdf

iscN-Channel MOSFET Transistor IRLIZ34GFEATURESLow drain-source on-resistance:RDS(ON) 50m @V =5VGSEnhancement mode:Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: