IRLIZ34A MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLIZ34A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 83 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Drain Current |Id|: 30 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 970 pF
Maximum Drain-Source On-State Resistance (Rds): 0.046 Ohm
Package: I2PAK
IRLIZ34A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLIZ34A Datasheet (PDF)
3.1. irliz34g.pdf 
Size:169K _international_rectifier
3.2. irliz34n.pdf Size:105K _international_rectifier
PD - 9.1329B IRLIZ34N HEXFET® Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.035? Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 22A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest po
3.3. irliz34gpbf.pdf Size:1006K _international_rectifier
PD- 95656 IRLIZ34GPbF • Lead-Free 7/26/04 Document Number: 91317 www.vishay.com 1 IRLIZ34GPbF Document Number: 91317 www.vishay.com 2 IRLIZ34GPbF Document Number: 91317 www.vishay.com 3 IRLIZ34GPbF Document Number: 91317 www.vishay.com 4 IRLIZ34GPbF Document Number: 91317 www.vishay.com 5 IRLIZ34GPbF Document Number: 91317 www.vishay.com 6 IRLIZ34GPbF Peak Diode Recover
3.4. irliz34g_sihliz34g.pdf Size:1637K _vishay
IRLIZ34G, SiHLIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 60 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 5.0 V 0.050 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 35 • Sink to Lead Creepage Distance 4.8 mm Qgs (nC) 7.1 • Logic-Level Gate Drive Qgd (nC) 25 • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switch
Datasheet: IRLI630G , IRLI640A , IRLI640G , IRLIZ14A , IRLIZ14G , IRLIZ24A , IRLIZ24G , IRLIZ24N , IRF520 , IRLIZ34G , IRLIZ34N , IRLIZ44A , IRLIZ44G , IRLIZ44N , IRLL014 , IRLL014N , IRLL024N .
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