IRLIZ34A
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLIZ34A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 27
nC
trⓘ - Rise Time: 21
nS
Cossⓘ -
Output Capacitance: 334
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046
Ohm
Package:
TO262
IRLIZ34A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLIZ34A
Datasheet (PDF)
7.1. Size:1006K international rectifier
irliz34gpbf.pdf 
PD- 95656IRLIZ34GPbF Lead-Free7/26/04Document Number: 91317 www.vishay.com1IRLIZ34GPbFDocument Number: 91317 www.vishay.com2IRLIZ34GPbFDocument Number: 91317 www.vishay.com3IRLIZ34GPbFDocument Number: 91317 www.vishay.com4IRLIZ34GPbFDocument Number: 91317 www.vishay.com5IRLIZ34GPbFDocument Number: 91317 www.vishay.com6IRLIZ34GPbFPeak Diode Re
7.2. Size:105K international rectifier
irliz34n.pdf
PD - 9.1329BIRLIZ34NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.035 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 22ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelow
7.3. Size:258K international rectifier
irliz34npbf.pdf
PD - 95455IRLIZ34NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Isolated PackageVDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.035l Fully Avalanche Rated Gl Lead-FreeID = 22ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing technique
7.5. Size:1637K vishay
irliz34g sihliz34g.pdf
IRLIZ34G, SiHLIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.050f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mmQgs (nC) 7.1 Logic-Level Gate DriveQgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V
7.6. Size:1638K vishay
irliz34gpbf sihliz34g.pdf
IRLIZ34G, SiHLIZ34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5.0 V 0.050f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 35 Sink to Lead Creepage Distance 4.8 mmQgs (nC) 7.1 Logic-Level Gate DriveQgd (nC) 25 RDS(on) Specified at VGS = 4 V and 5 V
7.7. Size:275K inchange semiconductor
irliz34g.pdf
iscN-Channel MOSFET Transistor IRLIZ34GFEATURESLow drain-source on-resistance:RDS(ON) 50m @V =5VGSEnhancement mode:Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
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