IRLIZ44G Todos los transistores

 ..1. Size:170K  1
 irliz44g.pdf

 ..2. Size:170K  international rectifier
 irliz44g.pdf

 ..3. Size:1182K  international rectifier
 irliz44gpbf.pdf

PD- 95754 IRLIZ44GPbF Lead-Free www.irf.com 1 8/23/04 IRLIZ44GPbF 2 www.irf.com IRLIZ44GPbF www.irf.com 3 IRLIZ44GPbF 4 www.irf.com IRLIZ44GPbF www.irf.com 5 IRLIZ44GPbF 6 www.irf.com IRLIZ44GPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - +

 ..4. Size:275K  inchange semiconductor
 irliz44g.pdf

iscN-Channel MOSFET Transistor IRLIZ44G FEATURES Low drain-source on-resistance RDS(ON) 28m @V =5V GS Enhancement mode Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 7.1. Size:193K  1
 irliz44a irlw44a.pdf

 7.2. Size:105K  international rectifier
 irliz44n.pdf

PD - 9.1498A IRLIZ44N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.022 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 30A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremel

 7.3. Size:256K  international rectifier
 irliz44npbf.pdf

PD - 95456 IRLIZ44NPbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.022 l Fully Avalanche Rated G l Lead-Free ID = 30A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu

 7.4. Size:499K  infineon
 irliz44npbf.pdf

IRLIZ44NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.022 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 30A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

 7.5. Size:200K  inchange semiconductor
 irliz44n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRLIZ44N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T