IRLIZ44G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLIZ44G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 66(max)
nC
trⓘ - Rise Time: 230
nS
Cossⓘ -
Output Capacitance: 1200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package:
TO220F
IRLIZ44G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLIZ44G
Datasheet (PDF)
..3. Size:1182K international rectifier
irliz44gpbf.pdf
PD- 95754IRLIZ44GPbF Lead-Freewww.irf.com 18/23/04IRLIZ44GPbF2 www.irf.comIRLIZ44GPbFwww.irf.com 3IRLIZ44GPbF4 www.irf.comIRLIZ44GPbFwww.irf.com 5IRLIZ44GPbF6 www.irf.comIRLIZ44GPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+
..4. Size:275K inchange semiconductor
irliz44g.pdf
iscN-Channel MOSFET Transistor IRLIZ44GFEATURESLow drain-source on-resistance:RDS(ON) 28m @V =5VGSEnhancement mode:Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
7.2. Size:105K international rectifier
irliz44n.pdf
PD - 9.1498AIRLIZ44NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process Technology VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.022 Sink to Lead Creepage Dist. = 4.8mmG Fully Avalanche RatedID = 30ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremel
7.3. Size:256K international rectifier
irliz44npbf.pdf
PD - 95456IRLIZ44NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Isolated Package VDSS = 55Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.022l Fully Avalanche RatedGl Lead-FreeID = 30ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniqu
7.4. Size:499K infineon
irliz44npbf.pdf
IRLIZ44NPbF Logic Level Gate Drive HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.022 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 30A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec
7.5. Size:200K inchange semiconductor
irliz44n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRLIZ44NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
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