IRF8721PBF-1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF8721PBF-1  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 229 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm

Encapsulados: SO-8

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IRF8721PBF-1 datasheet

 ..1. Size:207K  international rectifier
 irf8721pbf-1.pdf pdf_icon

IRF8721PBF-1

IRF8721PbF-1 HEXFET Power MOSFET A VDS 30 V A 1 8 S D RDS(on) max 8.5 m 2 7 S D (@V = 10V) GS 3 6 Qg (typical) 8.3 nC S D ID 4 5 G D 14 A (@T = 25 C) A SO-8 Top View Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems Features Benefits Industry-standard pinou

 4.1. Size:229K  international rectifier
 irf8721pbf.pdf pdf_icon

IRF8721PBF-1

PD - 97119 IRF8721PbF HEXFET Power MOSFET Applications l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor 8.5m 30V @VGS = 10V 8.3nC Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems A A Benefits 1 8 S D l Very Low Gate Charge 2 7 S D l Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Impedance 4 5 G D l Ful

 7.1. Size:252K  international rectifier
 irf8721gpbf.pdf pdf_icon

IRF8721PBF-1

PD - 96262 IRF8721GPbF Applications HEXFET Power MOSFET l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor Power 8.5m @VGS = 10V 30V 8.3nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems A Benefits A 1 8 S D l Very Low Gate Charge 2 7 S D l Low RDS(on) at 4.5V VGS 3 6 l Low Gate Impedance S D 4 5 l Fully Chara

 7.2. Size:1491K  cn vbsemi
 irf8721tr.pdf pdf_icon

IRF8721PBF-1

IRF8721TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

MOSTRAR MÁS

Otros transistores... IRF8707GPBF, IRF8707PBF, IRF8707PBF-1, IRF8714GPBF, IRF8714PBF, IRF8714PBF-1, IRF8721GPBF, IRF8721PBF, 75N75, IRF8734PBF, IRF8736PBF, IRF8736PBF-1, IRF8788PBF, IRF8788PBF-1, IRF8852PBF, IRF8910GPBF, IRF8910PBF-1