IRF8721PBF-1
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF8721PBF-1
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.35
V
|Id|ⓘ - Maximum Drain Current: 14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.3
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 229
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085
Ohm
Package:
SO-8
IRF8721PBF-1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF8721PBF-1
Datasheet (PDF)
..1. Size:207K international rectifier
irf8721pbf-1.pdf
IRF8721PbF-1HEXFET Power MOSFETAVDS 30 VA1 8S DRDS(on) max 8.5 m2 7S D(@V = 10V)GS3 6Qg (typical) 8.3 nCS DID 4 5G D14 A(@T = 25C)ASO-8Top ViewApplicationsl Control MOSFET of Sync-Buck Converters used for Notebook Processor Powerl Control MOSFET for Isolated DC-DC Converters in Networking SystemsFeatures BenefitsIndustry-standard pinou
4.1. Size:229K international rectifier
irf8721pbf.pdf
PD - 97119IRF8721PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck VDSS RDS(on) maxQg Converters used for Notebook Processor8.5m30V :@VGS = 10V8.3nCPowerl Control MOSFET for Isolated DC-DCConverters in Networking SystemsAABenefits1 8S Dl Very Low Gate Charge2 7S Dl Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Impedance45G Dl Ful
4.2. Size:229K infineon
irf8721pbf.pdf
PD - 97119IRF8721PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck VDSS RDS(on) maxQg Converters used for Notebook Processor8.5m30V :@VGS = 10V8.3nCPowerl Control MOSFET for Isolated DC-DCConverters in Networking SystemsAABenefits1 8S Dl Very Low Gate Charge2 7S Dl Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Impedance45G Dl Ful
7.1. Size:252K international rectifier
irf8721gpbf.pdf
PD - 96262IRF8721GPbFApplications HEXFET Power MOSFETl Control MOSFET of Sync-BuckVDSS RDS(on) maxQg Converters used for Notebook ProcessorPower8.5m @VGS = 10V30V 8.3nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsABenefitsA1 8S Dl Very Low Gate Charge2 7S Dl Low RDS(on) at 4.5V VGS3 6l Low Gate Impedance S D4 5l Fully Chara
7.2. Size:1491K cn vbsemi
irf8721tr.pdf
IRF8721TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
Datasheet: WPB4002
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