All MOSFET. IRF8721PBF-1 Datasheet

 

IRF8721PBF-1 Datasheet and Replacement


   Type Designator: IRF8721PBF-1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 229 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: SO-8
 

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IRF8721PBF-1 Datasheet (PDF)

 ..1. Size:207K  international rectifier
irf8721pbf-1.pdf pdf_icon

IRF8721PBF-1

IRF8721PbF-1HEXFET Power MOSFETAVDS 30 VA1 8S DRDS(on) max 8.5 m2 7S D(@V = 10V)GS3 6Qg (typical) 8.3 nCS DID 4 5G D14 A(@T = 25C)ASO-8Top ViewApplicationsl Control MOSFET of Sync-Buck Converters used for Notebook Processor Powerl Control MOSFET for Isolated DC-DC Converters in Networking SystemsFeatures BenefitsIndustry-standard pinou

 4.1. Size:229K  international rectifier
irf8721pbf.pdf pdf_icon

IRF8721PBF-1

PD - 97119IRF8721PbFHEXFET Power MOSFETApplicationsl Control MOSFET of Sync-Buck VDSS RDS(on) maxQg Converters used for Notebook Processor8.5m30V :@VGS = 10V8.3nCPowerl Control MOSFET for Isolated DC-DCConverters in Networking SystemsAABenefits1 8S Dl Very Low Gate Charge2 7S Dl Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Impedance45G Dl Ful

 7.1. Size:252K  international rectifier
irf8721gpbf.pdf pdf_icon

IRF8721PBF-1

PD - 96262IRF8721GPbFApplications HEXFET Power MOSFETl Control MOSFET of Sync-BuckVDSS RDS(on) maxQg Converters used for Notebook ProcessorPower8.5m @VGS = 10V30V 8.3nCl Control MOSFET for Isolated DC-DCConverters in Networking SystemsABenefitsA1 8S Dl Very Low Gate Charge2 7S Dl Low RDS(on) at 4.5V VGS3 6l Low Gate Impedance S D4 5l Fully Chara

 7.2. Size:1491K  cn vbsemi
irf8721tr.pdf pdf_icon

IRF8721PBF-1

IRF8721TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

Datasheet: IRF8707GPBF , IRF8707PBF , IRF8707PBF-1 , IRF8714GPBF , IRF8714PBF , IRF8714PBF-1 , IRF8721GPBF , IRF8721PBF , HY1906P , IRF8734PBF , IRF8736PBF , IRF8736PBF-1 , IRF8788PBF , IRF8788PBF-1 , IRF8852PBF , IRF8910GPBF , IRF8910PBF-1 .

History: FQA18N50V2 | KU2751K | IRFPS40N60K | IRF60B217

Keywords - IRF8721PBF-1 MOSFET datasheet

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