IRF9388PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9388PBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 57 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0119 Ohm

Encapsulados: SO-8

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IRF9388PBF datasheet

 ..1. Size:308K  international rectifier
irf9388pbf.pdf pdf_icon

IRF9388PBF

PD - 97521 IRF9388PbF HEXFET Power MOSFET VDS -30 V VGS max 25 V RDS(on) max 11.9 m (@VGS = -10V) ID -12 A (@TA = 25 C) SO-8 Applications Adaptor Input Switch for Notebook PC Features and Benefits Resulting Benefits Features 25V VGS max Direct Drive at High VGS Industry-Standard SO8 Package Multi-Vendor Compatibility Environmentally Friendlier RoHS Compliant

 8.1. Size:244K  international rectifier
irf9389pbf.pdf pdf_icon

IRF9388PBF

IRF9389PbF HEXFET Power MOSFET N-CH P-CH N-CHANNEL MOSFET 1 8 S1 D1 VDS 30 -30 V 2 7 G1 D1 RDS(on) max 27 64 m 3 6 S2 D2 Qg (typical) 6.8 8.1 nC 4 5 G2 D2 P-CHANNEL MOSFET ID Top View SO-8 6.8 -4.6 A (@TA = 25 C) Applications l High and Low Side Switches for Inverter l High and Low Side Switches for Generic Half-Bridge Features Benefits High and low-side MOSFETs i

 8.2. Size:244K  international rectifier
irf9389.pdf pdf_icon

IRF9388PBF

IRF9389PbF HEXFET Power MOSFET N-CH P-CH N-CHANNEL MOSFET 1 8 S1 D1 VDS 30 -30 V 2 7 G1 D1 RDS(on) max 27 64 m 3 6 S2 D2 Qg (typical) 6.8 8.1 nC 4 5 G2 D2 P-CHANNEL MOSFET ID Top View SO-8 6.8 -4.6 A (@TA = 25 C) Applications l High and Low Side Switches for Inverter l High and Low Side Switches for Generic Half-Bridge Features Benefits High and low-side MOSFETs i

 8.3. Size:242K  international rectifier
irf9383mpbf.pdf pdf_icon

IRF9388PBF

IRF9383MPbF DirectFET P-Channel Power MOSFET Typical values (unless otherwise specified) Applications l Isolation Switch for Input Power or Battery Application VDSS VGS RDS(on) RDS(on) l High Side Switch for Inverter Applications -30V max 20V max 2.3m @-10V 3.8m @-4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Features and Benefits 67nC 29nC 9.4nC 315nC 59nC -1.8V l Environmentaly

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