SSH5N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSH5N90 Datasheet (PDF)

..1. Size:264K semelab
ssh5n90.pdf pdf_icon

0.1. Size:934K samsung
ssh5n90a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.9 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 2.300 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

9.1. Size:258K 1
ssh5n80a.pdf pdf_icon

SSH5N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.824 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac

Otros transistores... IRF9530-220M , SSH10N80 , SSH11N90 , SSH3N90 , SSH4N55 , SSH4N60 , SSH4N80 , SSH4N90 , IRF4905 , SSH60N08 , SSH6N80 , SSH8N70 , SSH8N80 , SSI2N60B , SSI4N60B , SSM03N70GH , SSM03N70GJ .