SSH5N90 MOSFET Datasheet: N-Ch, 900V, 5A. Full specification with pinout and replacement list

SSH5N90 Specs and Replacement

Type Designator: SSH5N90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 140 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-3P

SSH5N90 substitution

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SSH5N90 datasheet

..1. Size:264K semelab
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0.1. Size:934K samsung
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Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.9 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 2.300 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒

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SSH5N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.824 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac... See More ⇒

Detailed specifications: IRF9530-220M , SSH10N80 , SSH11N90 , SSH3N90 , SSH4N55 , SSH4N60 , SSH4N80 , SSH4N90 , IRF4905 , SSH60N08 , SSH6N80 , SSH8N70 , SSH8N80 , SSI2N60B , SSI4N60B , SSM03N70GH , SSM03N70GJ .