SSM2316GN Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM2316GN  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm

Encapsulados: SOT-23-3

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SSM2316GN datasheet

 ..1. Size:498K  silicon standard
 ssm2316gn.pdf pdf_icon

SSM2316GN

SSM2316GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM2316GN acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It RDS(ON) 42m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 4.7A D The SSM2316GN is supplied in an RoHS-compliant Pb-free; RoHS-c

 8.1. Size:310K  silicon standard
 ssm2312gn.pdf pdf_icon

SSM2316GN

SSM2312GN N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 20V D Simple drive requirement R 50m DS(ON) Fast switching ID 4.3A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2312GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as DC

 8.2. Size:313K  silicon standard
 ssm2313gn.pdf pdf_icon

SSM2316GN

SSM2313GN P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -20V D Simple drive requirement R 120m DS(ON) Fast switching ID -2.5A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2313GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as

 8.3. Size:499K  silicon standard
 ssm2310gn.pdf pdf_icon

SSM2316GN

SSM2310GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM2310GN acheives fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It RDS(ON) 90m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 3A D The SSM2310GN is supplied in an RoHS-compliant Pb-free; RoHS-com

MOSTRAR MÁS

Otros transistores... SSM2305GN, SSM2306GN, SSM2307GN, SSM2309GN, SSM2310GN, SSM2312GN, SSM2313GN, SSM2314GN, IRF520, SSM2318GEN, SSM25T03GH, SSM25T03GJ, SSM2602GY, SSM2602Y, SSM2603GY, SSM2603Y, SSM2605GY