Справочник MOSFET. SSM2316GN

 

SSM2316GN Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSM2316GN
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.38 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.042 Ohm
   Тип корпуса: SOT-23-3
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

SSM2316GN Datasheet (PDF)

 ..1. Size:498K  silicon standard
 ssm2316gn.pdf pdf_icon

SSM2316GN

SSM2316GNN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM2316GN acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 42mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 4.7AD The SSM2316GN is supplied in an RoHS-compliantPb-free; RoHS-c

 8.1. Size:310K  silicon standard
 ssm2312gn.pdf pdf_icon

SSM2316GN

SSM2312GNN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 20VDSimple drive requirement R 50mDS(ON)Fast switching ID 4.3AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2312GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as DC

 8.2. Size:313K  silicon standard
 ssm2313gn.pdf pdf_icon

SSM2316GN

SSM2313GNP-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS -20VDSimple drive requirement R 120mDS(ON)Fast switching ID -2.5AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2313GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as

 8.3. Size:499K  silicon standard
 ssm2310gn.pdf pdf_icon

SSM2316GN

SSM2310GNN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM2310GN acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 90mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 3AD The SSM2310GN is supplied in an RoHS-compliantPb-free; RoHS-com

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SSM2305GN , SSM2306GN , SSM2307GN , SSM2309GN , SSM2310GN , SSM2312GN , SSM2313GN , SSM2314GN , CS150N03A8 , SSM2318GEN , SSM25T03GH , SSM25T03GJ , SSM2602GY , SSM2602Y , SSM2603GY , SSM2603Y , SSM2605GY .

History: DH033N04P

 

 
Back to Top

 


 
.