SSM2316GN datasheet, аналоги, основные параметры

Наименование производителя: SSM2316GN  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.38 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 70 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.042 Ohm

Тип корпуса: SOT-23-3

  📄📄 Копировать 

Аналог (замена) для SSM2316GN

- подборⓘ MOSFET транзистора по параметрам

 

SSM2316GN даташит

 ..1. Size:498K  silicon standard
 ssm2316gn.pdf pdf_icon

SSM2316GN

SSM2316GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM2316GN acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It RDS(ON) 42m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 4.7A D The SSM2316GN is supplied in an RoHS-compliant Pb-free; RoHS-c

 8.1. Size:310K  silicon standard
 ssm2312gn.pdf pdf_icon

SSM2316GN

SSM2312GN N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 20V D Simple drive requirement R 50m DS(ON) Fast switching ID 4.3A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2312GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as DC

 8.2. Size:313K  silicon standard
 ssm2313gn.pdf pdf_icon

SSM2316GN

SSM2313GN P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -20V D Simple drive requirement R 120m DS(ON) Fast switching ID -2.5A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2313GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as

 8.3. Size:499K  silicon standard
 ssm2310gn.pdf pdf_icon

SSM2316GN

SSM2310GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM2310GN acheives fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It RDS(ON) 90m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 3A D The SSM2310GN is supplied in an RoHS-compliant Pb-free; RoHS-com

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SSM2305GN, SSM2306GN, SSM2307GN, SSM2309GN, SSM2310GN, SSM2312GN, SSM2313GN, SSM2314GN, IRF520, SSM2318GEN, SSM25T03GH, SSM25T03GJ, SSM2602GY, SSM2602Y, SSM2603GY, SSM2603Y, SSM2605GY