SSM2316GN MOSFET Datasheet: N-Ch, 30V, 4.7A. Full specification with pinout and replacement list

SSM2316GN Specs and Replacement

   Type Designator: SSM2316GN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SOT-23-3

SSM2316GN substitution

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SSM2316GN datasheet

..1. Size:498K silicon standard
ssm2316gn.pdf pdf_icon

SSM2316GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM2316GN acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It RDS(ON) 42m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 4.7A D The SSM2316GN is supplied in an RoHS-compliant Pb-free; RoHS-c... See More ⇒

8.1. Size:310K silicon standard
ssm2312gn.pdf pdf_icon

SSM2312GN N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 20V D Simple drive requirement R 50m DS(ON) Fast switching ID 4.3A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2312GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as DC... See More ⇒

8.2. Size:313K silicon standard
ssm2313gn.pdf pdf_icon

SSM2313GN P-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS -20V D Simple drive requirement R 120m DS(ON) Fast switching ID -2.5A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2313GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as... See More ⇒

8.3. Size:499K silicon standard
ssm2310gn.pdf pdf_icon

SSM2310GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM2310GN acheives fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It RDS(ON) 90m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 3A D The SSM2310GN is supplied in an RoHS-compliant Pb-free; RoHS-com... See More ⇒