SSM4409GEM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM4409GEM
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 860 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Paquete / Cubierta: SO-8
- Selección de transistores por parámetros
SSM4409GEM Datasheet (PDF)
ssm4409gem.pdf

SSM4409GEMP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DDDBVDSS -35VSimple Drive Requirement DRDS(ON) 7.5mLow On-resistance GFast Switching Characteristic ID -14.5ASSSRoHS Compliant SO-8DESCRIPTION DThe Advanced Power MOSFETs from Silicon Standard Corp. Gprovide the designer with the best combination of fast switching, ruggedized devic
ssm4407gm.pdf

SSM4407GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM4407GM acheives fast switching performanceBVDSS -30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 14mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -10.7AD The SSM4407GM is supplied in a RoHS-compliantPb-free; RoHS
ssm4424gm.pdf

SSM4424GMN-channel Enhancement-mode Power MOSFETDSimple drive requirement BVDSS 30VLower gate charge RDS(ON) 9mGFast switching characteristics I 13.8ADSPb-free, RoHS compliant.DESCRIPTIONDDAdvanced Power MOSFETs from Silicon Standard provide theDDdesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effecti
ssm4435m.pdf

SSM4435MP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS -30VDDLow on-resistance D R 20mDS(ON)DFast switching ID -8AGSSSO-8 SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.SThe SO-8 package is widely
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK2931 | FQPF13N50C
History: 2SK2931 | FQPF13N50C



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
pk6d0ba mosfet | 2sd726 | c536 transistor equivalent | 2sa1294 datasheet | mp10b transistor | bc182b | 2n3054 transistor equivalent | 2n554