All MOSFET. SSM4409GEM Datasheet

 

SSM4409GEM Datasheet and Replacement


   Type Designator: SSM4409GEM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 14.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 55 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 860 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: SO-8
 

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SSM4409GEM Datasheet (PDF)

 ..1. Size:183K  silicon standard
ssm4409gem.pdf pdf_icon

SSM4409GEM

SSM4409GEMP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DDDBVDSS -35VSimple Drive Requirement DRDS(ON) 7.5mLow On-resistance GFast Switching Characteristic ID -14.5ASSSRoHS Compliant SO-8DESCRIPTION DThe Advanced Power MOSFETs from Silicon Standard Corp. Gprovide the designer with the best combination of fast switching, ruggedized devic

 8.1. Size:526K  silicon standard
ssm4407gm.pdf pdf_icon

SSM4409GEM

SSM4407GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM4407GM acheives fast switching performanceBVDSS -30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 14mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -10.7AD The SSM4407GM is supplied in a RoHS-compliantPb-free; RoHS

 9.1. Size:301K  silicon standard
ssm4424gm.pdf pdf_icon

SSM4409GEM

SSM4424GMN-channel Enhancement-mode Power MOSFETDSimple drive requirement BVDSS 30VLower gate charge RDS(ON) 9mGFast switching characteristics I 13.8ADSPb-free, RoHS compliant.DESCRIPTIONDDAdvanced Power MOSFETs from Silicon Standard provide theDDdesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effecti

 9.2. Size:123K  silicon standard
ssm4435m.pdf pdf_icon

SSM4409GEM

SSM4435MP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS -30VDDLow on-resistance D R 20mDS(ON)DFast switching ID -8AGSSSO-8 SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.SThe SO-8 package is widely

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SWY640D | FDS7082N3

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