Справочник MOSFET. SSM4409GEM

 

SSM4409GEM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM4409GEM
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 35 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 14.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 55 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 860 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для SSM4409GEM

 

 

SSM4409GEM Datasheet (PDF)

 ..1. Size:183K  silicon standard
 ssm4409gem.pdf

SSM4409GEM SSM4409GEM

SSM4409GEMP-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DDDBVDSS -35VSimple Drive Requirement DRDS(ON) 7.5mLow On-resistance GFast Switching Characteristic ID -14.5ASSSRoHS Compliant SO-8DESCRIPTION DThe Advanced Power MOSFETs from Silicon Standard Corp. Gprovide the designer with the best combination of fast switching, ruggedized devic

 8.1. Size:526K  silicon standard
 ssm4407gm.pdf

SSM4409GEM SSM4409GEM

SSM4407GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM4407GM acheives fast switching performanceBVDSS -30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 14mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -10.7AD The SSM4407GM is supplied in a RoHS-compliantPb-free; RoHS

 9.1. Size:301K  silicon standard
 ssm4424gm.pdf

SSM4409GEM SSM4409GEM

SSM4424GMN-channel Enhancement-mode Power MOSFETDSimple drive requirement BVDSS 30VLower gate charge RDS(ON) 9mGFast switching characteristics I 13.8ADSPb-free, RoHS compliant.DESCRIPTIONDDAdvanced Power MOSFETs from Silicon Standard provide theDDdesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effecti

 9.2. Size:123K  silicon standard
 ssm4435m.pdf

SSM4409GEM SSM4409GEM

SSM4435MP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS -30VDDLow on-resistance D R 20mDS(ON)DFast switching ID -8AGSSSO-8 SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.SThe SO-8 package is widely

 9.3. Size:223K  silicon standard
 ssm4423gm.pdf

SSM4409GEM SSM4409GEM

SSM4423GMP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV -30VDSSDDLower gate charge R 15mDS(ON)DDFast switching characteristics ID -11AGSSSO-8SDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.

 9.4. Size:526K  silicon standard
 ssm4426gm.pdf

SSM4409GEM SSM4409GEM

SSM4426GMN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM4426GM acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. ItRDS(ON) 6.5mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 16AD The SSM4426GM is supplied in an RoHS-compliantPb-free; RoHS-c

 9.5. Size:135K  silicon standard
 ssm4410m.pdf

SSM4409GEM SSM4409GEM

SSM4410MN-CHANNEL ENHANCEMENT MODE POWER MOSFETLow on-resistance BV 30VDSSDDFast switching D RDS(ON) 13.5mD Simple drive requirement I 10ADGSSSO-8SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. GSThe SO-8 package is wid

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