SSM4800AGM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM4800AGM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 9.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: SO-8

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SSM4800AGM datasheet

 ..1. Size:283K  silicon standard
 ssm4800agm.pdf pdf_icon

SSM4800AGM

SSM4800AGM N-Channel Enhancement Mode Power Mosfet PRODUCT SUMMARY D Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 18m D Fast Switching Characteristic ID 9.4A G RoHS Compliant S S SO-8 S DESCRIPTION D The Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on

 9.1. Size:155K  silicon standard
 ssm4835m.pdf pdf_icon

SSM4800AGM

SSM4835M P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple drive requirement BVDSS -30V D D Low on-resistance D RDS(ON) 20m D Fast switching ID -8A G S S SO-8 S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S The SO-8 package is widely p

 9.2. Size:240K  silicon standard
 ssm4880agm.pdf pdf_icon

SSM4800AGM

SSM4880AGM N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BVDSS 30V D D Fast switching, planar construction D RDS(ON) 9m D Simple drive requirement ID 13A G S S SO-8 S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G G S The

 9.3. Size:372K  silicon standard
 ssm4816sm.pdf pdf_icon

SSM4800AGM

SSM4816SM DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE S1/D2 Simple drive requirement MOSFET-1 BVDSS 30V S1/D2 S1/D2 Suitable for DC-DC Converters R 22m DS(ON) D1 Fast switching performance ID 6.7A G2 MOSFET-2 BV 30V S2/A DSS S2/A SO-8 R 13m G1 DS(ON) Description ID 11.5A Advanced Power MOSFETs from Silicon Standard provide D1 the designer with the best combination of fa

MOSTRAR MÁS

Otros transistores... SSM4501GSD, SSM4502GM, SSM4507GM, SSM4509M, SSM4513M, SSM4532GM, SSM4565M, SSM4575M, 8205A, SSM4816SM, SSM4835M, SSM4880AGM, SSM4920M, SSM4924GM, SSM4953M, SSM4955GM, SSM4957M