SSM4800AGM Todos los transistores

 

SSM4800AGM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM4800AGM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 9.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 7 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 210 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: SO-8

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SSM4800AGM Datasheet (PDF)

 ..1. Size:283K  silicon standard
ssm4800agm.pdf

SSM4800AGM
SSM4800AGM

SSM4800AGM N-Channel Enhancement ModePower MosfetPRODUCT SUMMARY DSimple Drive RequirementBVDSS 30VDDLow On-resistance RDS(ON) 18mDFast Switching CharacteristicID 9.4AGRoHS Compliant SSSO-8SDESCRIPTION DThe Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on

 9.1. Size:155K  silicon standard
ssm4835m.pdf

SSM4800AGM
SSM4800AGM

SSM4835MP-CHANNEL ENHANCEMENT MODEPOWER MOSFETSimple drive requirement BVDSS -30VDDLow on-resistance D RDS(ON) 20mDFast switching ID -8AGSSSO-8SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.SThe SO-8 package is widely p

 9.2. Size:240K  silicon standard
ssm4880agm.pdf

SSM4800AGM
SSM4800AGM

SSM4880AGMN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BVDSS 30VDDFast switching, planar construction D RDS(ON) 9mDSimple drive requirement ID 13AGSSSO-8SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. GGSThe

 9.3. Size:372K  silicon standard
ssm4816sm.pdf

SSM4800AGM
SSM4800AGM

SSM4816SMDUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODES1/D2Simple drive requirement MOSFET-1 BVDSS 30VS1/D2S1/D2Suitable for DC-DC Converters R 22mDS(ON)D1Fast switching performance ID 6.7AG2MOSFET-2 BV 30VS2/ADSSS2/ASO-8R 13mG1DS(ON)Description ID 11.5AAdvanced Power MOSFETs from Silicon Standard provide D1the designer with the best combination of fa

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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