SSM4800AGM MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM4800AGM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 9.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 210 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SO-8
SSM4800AGM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM4800AGM Datasheet (PDF)
ssm4800agm.pdf
SSM4800AGM N-Channel Enhancement ModePower MosfetPRODUCT SUMMARY DSimple Drive RequirementBVDSS 30VDDLow On-resistance RDS(ON) 18mDFast Switching CharacteristicID 9.4AGRoHS Compliant SSSO-8SDESCRIPTION DThe Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on
ssm4835m.pdf
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ssm4880agm.pdf
SSM4880AGMN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BVDSS 30VDDFast switching, planar construction D RDS(ON) 9mDSimple drive requirement ID 13AGSSSO-8SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. GGSThe
ssm4816sm.pdf
SSM4816SMDUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODES1/D2Simple drive requirement MOSFET-1 BVDSS 30VS1/D2S1/D2Suitable for DC-DC Converters R 22mDS(ON)D1Fast switching performance ID 6.7AG2MOSFET-2 BV 30VS2/ADSSS2/ASO-8R 13mG1DS(ON)Description ID 11.5AAdvanced Power MOSFETs from Silicon Standard provide D1the designer with the best combination of fa
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