IRF9Z24SPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9Z24SPBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 68 nS

Cossⓘ - Capacitancia de salida: 360 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm

Encapsulados: TO-263

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IRF9Z24SPBF datasheet

 ..1. Size:193K  vishay
 irf9z24spbf sihf9z24l sihf9z24s.pdf pdf_icon

IRF9Z24SPBF

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S) Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating Temperature Qgs (nC) 5.4

 6.1. Size:311K  international rectifier
 irf9z24s.pdf pdf_icon

IRF9Z24SPBF

PD - 9.912A IRF9Z24S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z24S) VDSS = -60V Low-profile through-hole (IRF9Z24L) 175 C Operating Temperature RDS(on) = 0.28 Fast Switching G P- Channel ID = -11A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

 6.2. Size:167K  vishay
 irf9z24s sihf9z24s irf9z24l sihf9z24l.pdf pdf_icon

IRF9Z24SPBF

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S) Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating Temperature Qgs (nC) 5.4

 7.1. Size:168K  international rectifier
 irf9z24ns.pdf pdf_icon

IRF9Z24SPBF

PD - 91742A IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z24NS) VDSS = -55V Low-profile through-hole (IRF9Z24NL) 175 C Operating Temperature RDS(on) = 0.175 P-Channel G Fast Switching ID = -12A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi

MOSTRAR MÁS

Otros transistores... IRF9Z14PBF, IRF9Z14SPBF, IRF9Z20PBF, IRF9Z24L, IRF9Z24NLPBF, IRF9Z24NPBF, IRF9Z24NSPBF, IRF9Z24PBF, 20N50, IRF9Z30PBF, IRF9Z34L, IRF9Z34NLPBF, IRF9Z34NPBF, IRF9Z34NSPBF, IRF9Z34PBF, IRF9Z34SPBF, IRFAC30