All MOSFET. IRF9Z24SPBF Datasheet

 

IRF9Z24SPBF Datasheet and Replacement


   Type Designator: IRF9Z24SPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO-263
 

 IRF9Z24SPBF substitution

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IRF9Z24SPBF Datasheet (PDF)

 ..1. Size:193K  vishay
 irf9z24spbf sihf9z24l sihf9z24s.pdf pdf_icon

IRF9Z24SPBF

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S)Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating TemperatureQgs (nC) 5.4

 6.1. Size:311K  international rectifier
 irf9z24s.pdf pdf_icon

IRF9Z24SPBF

PD - 9.912AIRF9Z24S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z24S)VDSS = -60V Low-profile through-hole (IRF9Z24L) 175C Operating TemperatureRDS(on) = 0.28 Fast SwitchingG P- ChannelID = -11A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

 6.2. Size:167K  vishay
 irf9z24s sihf9z24s irf9z24l sihf9z24l.pdf pdf_icon

IRF9Z24SPBF

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S)Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating TemperatureQgs (nC) 5.4

 7.1. Size:168K  international rectifier
 irf9z24ns.pdf pdf_icon

IRF9Z24SPBF

PD - 91742AIRF9Z24NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z24NS)VDSS = -55V Low-profile through-hole (IRF9Z24NL) 175C Operating TemperatureRDS(on) = 0.175 P-ChannelG Fast SwitchingID = -12A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

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Datasheet: IRF9Z14PBF , IRF9Z14SPBF , IRF9Z20PBF , IRF9Z24L , IRF9Z24NLPBF , IRF9Z24NPBF , IRF9Z24NSPBF , IRF9Z24PBF , 2N60 , IRF9Z30PBF , IRF9Z34L , IRF9Z34NLPBF , IRF9Z34NPBF , IRF9Z34NSPBF , IRF9Z34PBF , IRF9Z34SPBF , IRFAC30 .

History: FMC16N50E | IRLL2705TR | IRL640PBF | R6047ENZ1 | FQPF12P10 | IRLR2905PBF | RU30110M

Keywords - IRF9Z24SPBF MOSFET datasheet

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