IRF9Z34NPBF Todos los transistores

 

IRF9Z34NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF9Z34NPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 68 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 19 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO-220AB
 

 Búsqueda de reemplazo de IRF9Z34NPBF MOSFET

   - Selección ⓘ de transistores por parámetros

 

IRF9Z34NPBF Datasheet (PDF)

 ..1. Size:240K  international rectifier
 irf9z34npbf.pdf pdf_icon

IRF9Z34NPBF

IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S

 6.1. Size:108K  international rectifier
 irf9z34n.pdf pdf_icon

IRF9Z34NPBF

PD - 9.1485BIRF9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -19ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are

 6.2. Size:241K  international rectifier
 auirf9z34n.pdf pdf_icon

IRF9Z34NPBF

PD - 97627AAUTOMOTIVE GRADEAUIRF9Z34NFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl P-Channel MOSFETDV(BR)DSS-55Vl Dynamic dV/dT Ratingl 175C Operating TemperatureRDS(on) max.0.10l Fast Switching Gl Fully Avalanche RatedIDS -19Al Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescriptionS

 6.3. Size:162K  international rectifier
 irf9z34ns.pdf pdf_icon

IRF9Z34NPBF

PD - 9.1525IRF9Z34NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z34NS)VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG P-ChannelID = -19A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie

MOSTRAR MÁS

Otros transistores... IRF9Z24NLPBF , IRF9Z24NPBF , IRF9Z24NSPBF , IRF9Z24PBF , IRF9Z24SPBF , IRF9Z30PBF , IRF9Z34L , IRF9Z34NLPBF , AON6380 , IRF9Z34NSPBF , IRF9Z34PBF , IRF9Z34SPBF , IRFAC30 , IRFAC40 , IRFAC42 , IRFAE30 , IRFAE40 .

History: RU7080R | IRF7807VTRPBF-1 | IRF7601PBF

 

 
Back to Top

 


 
.