IRF9Z34NPBF Datasheet. Specs and Replacement

Type Designator: IRF9Z34NPBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO-220AB

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IRF9Z34NPBF substitution

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IRF9Z34NPBF datasheet

 ..1. Size:240K  international rectifier
irf9z34npbf.pdf pdf_icon

IRF9Z34NPBF

IRF9Z34NPbF l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated G l Lead-Free Description S ... See More ⇒

 6.1. Size:108K  international rectifier
irf9z34n.pdf pdf_icon

IRF9Z34NPBF

PD - 9.1485B IRF9Z34N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.10 P-Channel G Fully Avalanche Rated ID = -19A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are... See More ⇒

 6.2. Size:241K  international rectifier
auirf9z34n.pdf pdf_icon

IRF9Z34NPBF

PD - 97627A AUTOMOTIVE GRADE AUIRF9Z34N Features HEXFET Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -55V l Dynamic dV/dT Rating l 175 C Operating Temperature RDS(on) max. 0.10 l Fast Switching G l Fully Avalanche Rated ID S -19A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description S ... See More ⇒

 6.3. Size:162K  international rectifier
irf9z34ns.pdf pdf_icon

IRF9Z34NPBF

PD - 9.1525 IRF9Z34NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34NS) VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175 C Operating Temperature RDS(on) = 0.10 Fast Switching G P-Channel ID = -19A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie... See More ⇒

Detailed specifications: IRF9Z24NLPBF, IRF9Z24NPBF, IRF9Z24NSPBF, IRF9Z24PBF, IRF9Z24SPBF, IRF9Z30PBF, IRF9Z34L, IRF9Z34NLPBF, IRFZ24N, IRF9Z34NSPBF, IRF9Z34PBF, IRF9Z34SPBF, IRFAC30, IRFAC40, IRFAC42, IRFAE30, IRFAE40

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