IRFAC30 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFAC30  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm

Encapsulados: TO3

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IRFAC30 datasheet

 ..1. Size:153K  international rectifier
irfac30.pdf pdf_icon

IRFAC30

PD -90513 REPETITIVE AVALANCHE AND dv/dt RATED IRFAC30 600V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAC30 600V 2.2 3.6 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design

 ..2. Size:209K  inchange semiconductor
irfac30.pdf pdf_icon

IRFAC30

isc N-Channel Mosfet Transistor IRFAC30 FEATURES Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Rugged Gate Oxide Technology High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current ,high speed switching Switch mode power supplies DC-AC converters for welding equip

 8.1. Size:45K  international rectifier
irfac32.pdf pdf_icon

IRFAC30

 8.2. Size:207K  inchange semiconductor
irfac32.pdf pdf_icon

IRFAC30

isc N-Channel Mosfet Transistor IRFAC32 FEATURES Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Rugged Gate Oxide Technology High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current ,high speed switching Switch mode power supplies DC-AC converters for welding equip

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