IRFAC30 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFAC30 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 80 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
Encapsulados: TO3
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IRFAC30 datasheet
irfac30.pdf
PD -90513 REPETITIVE AVALANCHE AND dv/dt RATED IRFAC30 600V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAC30 600V 2.2 3.6 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design
irfac30.pdf
isc N-Channel Mosfet Transistor IRFAC30 FEATURES Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Rugged Gate Oxide Technology High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current ,high speed switching Switch mode power supplies DC-AC converters for welding equip
irfac32.pdf
isc N-Channel Mosfet Transistor IRFAC32 FEATURES Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Rugged Gate Oxide Technology High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current ,high speed switching Switch mode power supplies DC-AC converters for welding equip
Otros transistores... IRF9Z24SPBF, IRF9Z30PBF, IRF9Z34L, IRF9Z34NLPBF, IRF9Z34NPBF, IRF9Z34NSPBF, IRF9Z34PBF, IRF9Z34SPBF, 75N75, IRFAC40, IRFAC42, IRFAE30, IRFAE40, IRFAE50, IRFAF30, IRFAF50, IRFAG30
History: IXTT60N10 | PDN2309S
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