IRFAC30 - Даташиты. Аналоги. Основные параметры

PD -90513REPETITIVE AVALANCHE AND dv/dt RATED IRFAC30600V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAC30 600V 2.2 3.6The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design

isc N-Channel Mosfet Transistor IRFAC30FEATURESLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaRugged Gate Oxide TechnologyHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current ,high speed switchingSwitch mode power suppliesDC-AC converters for welding equip

isc N-Channel Mosfet Transistor IRFAC32FEATURESLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaRugged Gate Oxide TechnologyHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current ,high speed switchingSwitch mode power suppliesDC-AC converters for welding equip

PD - 90587REPETITIVE AVALANCHE AND dv/dt RATED IRFAC40600V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAC40 600V 1.2 6.2The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig

IRFAC40,SemiconductorIRFAC426.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,January 1998 N-Channel Power MOSFETs 6.2A and 5.4A, 600VDescription rDS(ON) = 1.2 and 1.6These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power Repetitive Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a Simple