IRFAC30 Datasheet. Specs and Replacement
Type Designator: IRFAC30 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO3
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IRFAC30 datasheet
irfac30.pdf
PD -90513 REPETITIVE AVALANCHE AND dv/dt RATED IRFAC30 600V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRFAC30 600V 2.2 3.6 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design... See More ⇒
irfac30.pdf
isc N-Channel Mosfet Transistor IRFAC30 FEATURES Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Rugged Gate Oxide Technology High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current ,high speed switching Switch mode power supplies DC-AC converters for welding equip... See More ⇒
irfac32.pdf
isc N-Channel Mosfet Transistor IRFAC32 FEATURES Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Rugged Gate Oxide Technology High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current ,high speed switching Switch mode power supplies DC-AC converters for welding equip... See More ⇒
Detailed specifications: IRF9Z24SPBF, IRF9Z30PBF, IRF9Z34L, IRF9Z34NLPBF, IRF9Z34NPBF, IRF9Z34NSPBF, IRF9Z34PBF, IRF9Z34SPBF, 75N75, IRFAC40, IRFAC42, IRFAE30, IRFAE40, IRFAE50, IRFAF30, IRFAF50, IRFAG30
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