2SJ331 Todos los transistores

 

2SJ331 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ331

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 30 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 160 nC

Tiempo de elevación (tr): 320 nS

Conductancia de drenaje-sustrato (Cd): 2300 pF

Resistencia drenaje-fuente RDS(on): 0.04 Ohm

Empaquetado / Estuche: MP88

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2SJ331 Datasheet (PDF)

1.1. 2sj331.pdf Size:344K _nec

2SJ331
2SJ331

5.1. 2sj332l-s.pdf Size:77K _upd

2SJ331
2SJ331

www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter Outline DPAK-2 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3. Source

5.2. 2sj334.pdf Size:427K _toshiba

2SJ331
2SJ331

2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-?-MOSV) 2SJ334 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 29 m? (typ.) High forward transfer admittance : |Yfs| = 23 S (typ.) Low leakage current : IDSS = -100 ?A (max) (VDS = -60 V) Enhancement mode : Vth = -0.8 t

 5.3. 2sj338.pdf Size:112K _toshiba

2SJ331
2SJ331

2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admittance : |Y | = 0.7 S (typ.) fs Complementary to 2SK2162 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS

5.4. 2sj339.pdf Size:40K _sanyo

2SJ331
2SJ331

Ordering number:ENN6396 P-Channel Silicon MOSFET 2SJ339 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A 4V drive. [2SJ339] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML Specifi

 5.5. 2sj337.pdf Size:98K _sanyo

2SJ331
2SJ331

Ordering number:EN4669 P-Channel Silicon MOSFET 2SJ337 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ337] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ337] 6.5 2.3 5.0 0.5 4 0.

5.6. 2sj330.pdf Size:338K _nec

2SJ331
2SJ331

Otros transistores... 2SJ303 , 2SJ324 , 2SJ325 , 2SJ326 , 2SJ327 , 2SJ328 , 2SJ329 , 2SJ330 , IRFP4232 , 2SJ353 , 2SJ411 , 2SJ424 , 2SJ425 , 2SJ44 , 2SJ448 , 2SJ449 , 2SJ45 .

 
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