2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admittance : |Y | = 0.7 S (typ.) fs Complementary to 2SK2162 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -180 VGate-source voltage VGSS

2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ334 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 29 m (typ.) High forward transfer admittance : |Yfs| = 23 S (typ.) Low leakage current : IDSS = -100 A (max) (VDS = -60 V) Enhancement mode : Vth = -0

Ordering number:EN4669P-Channel Silicon MOSFET2SJ337Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ337]6.52.35.00.540.850.71.21 : Gate0.60.52 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ337]6.5 2.35.0 0.5

Ordering number:ENN6396P-Channel Silicon MOSFET2SJ339Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A 4V drive.[2SJ339] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO-220ML

www.DataSheet4U.com2SJ332(L), 2SJ332(S)Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converterOutlineDPAK-244123123D1. Gate G2. Drain 3. Source

2SJ337www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.033 at VGS = - 10 V - 26 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.046 at VGS = - 4.5 V - 21APPLICATIONS Load Switch Notebook Adaptor SwitchSTO-252GG D SDTop ViewP-Chan