2SJ331 Datasheet. Specs and Replacement

Type Designator: 2SJ331  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 320 nS

Cossⓘ - Output Capacitance: 2300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO3P

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2SJ331 datasheet

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2SJ331

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2SJ331

2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application Unit mm High breakdown voltage VDSS = -180 V High forward transfer admittance Y = 0.7 S (typ.) fs Complementary to 2SK2162 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS... See More ⇒

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2SJ331

2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ334 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON-resistance RDS (ON) = 29 m (typ.) High forward transfer admittance Yfs = 23 S (typ.) Low leakage current IDSS = -100 A (max) (VDS = -60 V) Enhancement mode Vth = -0... See More ⇒

 9.3. Size:98K  sanyo
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2SJ331

Ordering number EN4669 P-Channel Silicon MOSFET 2SJ337 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ337] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 Gate 0.6 0.5 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ337] 6.5 2.3 5.0 0.5 ... See More ⇒

Detailed specifications: 2SJ303, 2SJ324, 2SJ325, 2SJ326, 2SJ327, 2SJ328, 2SJ329, 2SJ330, NCEP15T14, 2SJ353, 2SJ411, 2SJ424, 2SJ425, 2SJ44, 2SJ448, 2SJ449, 2SJ45

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