SSM5H90ATU Datasheet. Equivalente

 ..1. Size:234K  toshiba
 ssm5h90atu.pdf

SSM5H90ATU Composite Devices Silicon N-Channel MOS/Diode Epitaxial Planar SSM5H90ATU SSM5H90ATU SSM5H90ATU SSM5H90ATU 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) Combined an N-channel MOSFET and a diode in one package. 2.1. MOSFET Features 2.1. MOSFET Features 2.1. MOSFET Features

 9.1. Size:267K  1
 ssm5h05tu.pdf

SSM5H05TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H05TU DC-DC Converter Unit mm Combined Nch MOSFET and Schottky Diode in one package. Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25 C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS 12 V DC ID 1.5 Drain current A

 9.2. Size:222K  toshiba
 ssm5h06fe.pdf

SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter Unit mm Combined Nch MOSFET and Schottky Diode in one Package 1.6 0.05 Small package 1.2 0.05 Absolute Maximum Ratings (Ta = 25 C) MOSFET Characteristics Symbol Rating Unit 1 5 Drain-Source voltage VDS 20 V 2 VGSS 10 Gate-Source voltage V ID 100 DC

 9.3. Size:201K  toshiba
 ssm5h12tu.pdf

SSM5H12TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H12TU DC-DC Converter Applications 1.8-V drive Unit mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source

 9.4. Size:220K  toshiba
 ssm5h11tu.pdf

SSM5H11TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H11TU DC-DC Converter Applications 4.0-V drive Unit mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source

 9.5. Size:309K  toshiba
 ssm5h07tu.pdf

SSM5H07TU Silicon N Channel MOS Type ( -MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H07TU DC-DC Converter Unit mm Nch MOSFET and Schottky diode combined in one package Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25 C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS 12 V DC ID 1.2 Drain current A

 9.6. Size:205K  toshiba
 ssm5h01tu.pdf

SSM5H01TU Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5H01TU DC-DC Converter Unit mm Combined Nch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25 C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS 20 V DC ID 1.4 Drain current

 9.7. Size:230K  toshiba
 ssm5h10tu.pdf

SSM5H10TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H10TU DC-DC Converter Applications 1.5-V drive Unit mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-sourc

 9.8. Size:192K  toshiba
 ssm5h16tu.pdf

SSM5H16TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H16TU DC-DC Converter Applications 1.8-V drive Unit mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-sourc

 9.9. Size:304K  toshiba
 ssm5h05tu.pdf

SSM5H05TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H05TU DC-DC Converter Unit mm Combined Nch MOSFET and Schottky Diode in one package. Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25 C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS 12 V DC ID 1.5 Drain current A

 9.10. Size:306K  toshiba
 ssm5h08tu.pdf

SSM5H08TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter Unit mm Nch MOSFET and schottky diode combined in one package Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25 C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS 12 V DC ID 1.5 Drain current A