All MOSFET. SSM5H90ATU Datasheet

 

SSM5H90ATU Datasheet and Replacement


   Type Designator: SSM5H90ATU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: UFV
 

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SSM5H90ATU Datasheet (PDF)

 ..1. Size:234K  toshiba
ssm5h90atu.pdf pdf_icon

SSM5H90ATU

SSM5H90ATUComposite Devices Silicon N-Channel MOS/Diode Epitaxial PlanarSSM5H90ATUSSM5H90ATUSSM5H90ATUSSM5H90ATU1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) Combined an N-channel MOSFET and a diode in one package.2.1. MOSFET Features2.1. MOSFET Features2.1. MOSFET Features

 9.1. Size:267K  1
ssm5h05tu.pdf pdf_icon

SSM5H90ATU

SSM5H05TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H05TU DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode in one package. Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.5Drain current A

 9.2. Size:222K  toshiba
ssm5h06fe.pdf pdf_icon

SSM5H90ATU

SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode in one Package 1.60.05 Small package 1.20.05Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating Unit 1 5Drain-Source voltage VDS 20 V 2VGSS 10 Gate-Source voltage V ID 100DC

 9.3. Size:201K  toshiba
ssm5h12tu.pdf pdf_icon

SSM5H90ATU

SSM5H12TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H12TU DC-DC Converter Applications 1.8-V driveUnit: mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 30 VGate-source

Datasheet: SSM5H05TU , SSM5H06FE , SSM5H07TU , SSM5H08TU , SSM5H10TU , SSM5H11TU , SSM5H12TU , SSM5H16TU , IRF3205 , SSM5P15FE , SSM60T03GH , SSM60T03GJ , SSM60T03GP , SSM60T03GS , SSM630GP , SSM6618M , SSM6679GM .

History: IPD50R950CE | CS5210 | CEF02N9 | PSMN013-100XS | WMB032N04LG2 | IXFN100N10S2 | FQB17N08TM

Keywords - SSM5H90ATU MOSFET datasheet

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